Determination of equivalent circuit model parameters from coupling-of-modes theory

Wang, S.T.; Chung, Mei−Hui; Shen, Chi–Yen; Huang, An

doi:10.1109/ultsym.2002.1193405

Cited by 4 publications

(3 citation statements)

References 11 publications

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“…These parameters are fixed of the COM equations for nondispersive SAW filters. For a dispersive layered SAW filter, some of the COM parameters become frequency dependent due to the phase velocity dispersion [14].…”

Section: Com Parameters Of a Dispersive Layered Saw Filtermentioning

confidence: 99%

Analysis of Frequency Response of IDT/ZnO/Si SAW Filter Using the Coupling of Modes Model

Ntagwirumugara

Gryba

Zhang

et al. 2007

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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A monolithic integration of filters on Si or GaAs substrates is highly desirable to miniaturize the outer dimensions of the cellular phones. But, direct monolithic integration of surface acoustic wave (SAW) filters is impossible with Si, which is nonpiezoelectric, and difficult with GaAs, which is weakly piezoelectric. One alternative is the deposition of a piezoelectric film on the semiconductor substrate. In this paper, we propose a modified coupling-ofmodes (COM) approach, which can be used in the practical design of a layered ZnO/Si SAW filter. This is a dispersive SAW-layered filter, and some of the COM parameters become frequency dependent due to the phase velocity dispersion. The frequency response of the 3-step ladder type ZnO/Si SAW filter is analyzed and compared with the experimental results.

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Section: Com Parameters Of a Dispersive Layered Saw Filtermentioning

confidence: 99%

Analysis of Frequency Response of IDT/ZnO/Si SAW Filter Using the Coupling of Modes Model

Ntagwirumugara

Gryba

Zhang

et al. 2007

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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“…For a dispersive layered SAW filter, some of the COM parameters become frequency dependent due to the phase velocity dispersion [11]. The effective permittivity of a layered piezoelectric structure [12] was used to calculate the velocity and the electromechanical coupling coefficient (Fig.3.). Fig.4.…”

Section: B the Electrical And Mechanical Perturbation Termsmentioning

confidence: 99%

Fabrication of 945 MHz Band Film Surface Acoustic Wave Resonators Using ZnO Thin Film with Si Substrate

Ntagwirumugara

Gryba

Zhang

et al. 2007

2007 IEEE International Frequency Control Symposium Joint With the 21st European Frequency and Time Forum

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This paper, we present the analysis of a ladder-type filter, in the frequency band of 945MHz, developed on a structure with two layers of a ZnO film on a Silicon substrate with aluminum (Al) IDTs using coupling of modes (COM) theory. The case of a layer ZnO deposited on a not-piezoelectric substrate, [111]-[110]-Si is examined. Although silicon is no piezoelectric, the configuration gives for the modes of surface of a higher order, the coupling coefficients K2 of about 5.5% (quite higher than the maximum value obtained for ZnO alone 1%) with the metallization coefficient of 0.5. We presents the optimization of the characteristics SAW, in particular by the choice of:-the thickness of the piezoelectric layer,-localization of IDTs,-the metallization or not of surface or interface,-crystalline orientation of the substrate and propagation direction, -the thickness of the fingers of IDT. The transfer function of SAW ladder type filter resonators (6 resonators) is presented, analyzed and compared with the experimental results. This frequency response confirms that it is possible to integrate on Si substrate the filters use for GSM and DECT systems.

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“…The effective permittivity of a layered piezoelectric structure [9] was used to calculate the velocity and the electromechanical coupling coefficient (Fig.3.). Fig.4.…”

Section: B11 the Electrical And Mechanical Perturbation Termsmentioning

confidence: 99%

Analysis and design of IDT/ZnO/Si resonator filter using coupling-of-modes theory

Ntagwirumugara¹,

Gryba²,

Lefebvre³

2007

Proceedings of the Interntional Congress on Ultrasonics

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In our work, a monolithic integration of RF filter SAW, on a semiconductor substrate such us Si or GaAs is highly desirable to miniaturize the outer dimensions and introduce the new functionalities of the cellular phones. But, direct monolithic integration of SAW filters is impossible with Si which is non piezoelectric and difficult with GaAs which is weakly piezoelectric. One alternative is the deposition of a piezoelectric film on the semiconductor substrate. We propose a modified coupling of modes (COM) approach, which can be used in the practical design of a layered ZnO/Si surface acoustic wave filter. We present an analysis and realisation of a ladder-type SAW filter using six resonators. The filter will be developed on a structure with three layers of a ZnO film and aluminium (Al) electrodes on a silicon (Si) substrate in the 930-960MHz frequency band range. This is a dispersive SAW layered filter, and some of the COM parameters become frequency dependent due to the phase velocity dispersion. The frequency response of the 3 step (6 resonators) ladder type IDT/ZnO/Si SAW filter is analysed and compared with the experimental results. This transfer function confirms that it is possible to integrate on Si substrate the filters use for GSM and DECT systems.

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Determination of equivalent circuit model parameters from coupling-of-modes theory

Cited by 4 publications

References 11 publications

Analysis of Frequency Response of IDT/ZnO/Si SAW Filter Using the Coupling of Modes Model

Analysis of Frequency Response of IDT/ZnO/Si SAW Filter Using the Coupling of Modes Model

Fabrication of 945 MHz Band Film Surface Acoustic Wave Resonators Using ZnO Thin Film with Si Substrate

Analysis and design of IDT/ZnO/Si resonator filter using coupling-of-modes theory

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