Determination of Interface and Bulk Trap Densities in High-Mobility p-type WSe₂Thin-Film Transistors

Ambipolar Charge Transport in Two-Dimensional WS2 Metal–Insulator–Semiconductor and Metal–Insulator–Semiconductor Field-Effect Transistors

“…At a high frequency of 100 kHz, an inversion behavior with the same capacitance is observed as the accumulation capacitance cannot be observed from a typical Si MOS or other TMDC-based MISs owing to the slow response of the minority carrier. 21,22,32,33 In sharp contrast, the ambipolar characteristics of 2D WS 2 semiconductor are attributed to the Fermi level located in the middle of the band gap, resulting in symmetric C−V characteristics at room temperature. A schematic of the accumulation (inversion)− depletion−inversion (accumulation) mode of the C−V characteristics is shown in Figure 2c.…”

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS2 field-effect transistors

“…As we are treating an already hybridized interface, we suspect that the formation of point defects therein, such as migrated interstitials and antisite defects, will serve to trap carriers at the interface and will reduce the crowded injection current at the contact [43]. This may be empirically confirmed with a combination of low-temperature electrical characterization and capacitance measurements [44,45] in future work.…”

Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors

“…Subthreshold swing, SS, was estimated from subthreshold region ( V on < V g < V th ) of transfer characteristics by using eq and it was found to be SS ∼ 2.4 V/dec. Ideally at room temperature, SS should have value of 60 mV/dec, and deviation from ideal SS is attributed to defects present in the channel and channel–SiO 2 interface which result in midgap states and acts as localized states (commonly known as trap states) for trapping charge carriers. , Localized trap states plays significant role in operation of various electronic (semiconducting) devices as well as optoelectronic devices (photoconduction and luminescence). A trap can capture and immobilize charge carriers and these trapped carriers can be released either by addition of energy (light or thermal) or by tunneling and/or thermally activated hopping between localized states.…”

“…Here we found that output characteristics (Id -Vd) are linear, indicating that junctions (p-n and Schottky) does not play any significant role in charge transport. In presence of trap states and under assumption that density of these states does not depend on energy, SS can be written as shown in Equation S.III.2, 11,12 (S.III.2) For T = 280 K, SS ~ 2.4 V/dec which correspond to Ntr ~ 3 × 10 12 cm -2 eV -1 .…”

“…Ideally at room temperature, SS should have value of 60 mV/ dec, 42 and deviation from ideal SS is attributed to defects present in the channel and channel−SiO 2 interface which result in midgap states and acts as localized states (commonly known as trap states) for trapping charge carriers. 43,44 Localized trap states plays significant role in operation of various electronic (semiconducting) devices as well as optoelectronic devices (photoconduction and luminescence).…”