Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors

Patil, Prasanna; Ghosh, Sujoy; Wasala, Milinda; Lei, Sidong; Vajtai, Róbert; Ajayan, Pulickel M.; Ghosh, Arindam; Talapatra, Saikat

doi:10.1021/acsnano.9b06846

Cited by 23 publications

(45 citation statements)

References 71 publications

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“…In the past, some efforts have been made to explain the MIT in 2D MoS 2 , [ 23–26 ] ReS 2 , [ 27 ] CuInSe, [ 28 ] and WSe 2 . [ 29 ] However, most of these studies were limited to a certain channel thickness.…”

Section: Introductionmentioning

confidence: 99%

Metal–Insulator Transition Driven by Traps in 2D WSe₂ Field‐Effect Transistor

Ali

Taqi

Ngo

et al. 2022

Adv Elect Materials

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trap charges. [7,10] These electrically active interface traps can adversely affect device performance by reducing charge carrier mobility, increasing subthreshold swing, and enhancing off-state current (reducing on/off ratio). [7] In addition, these charge impurities near the surface of 2D materials and different kinds of disorders can strongly suppress electronic interactions and control the electrical characteristics of the system. [11][12][13] Since the pioneering observation of metal-insulator transition (MIT) phenomena in 2D systems, carrier-carrier interaction has been widely considered as the driving force of MIT from the viewpoint of quantum phase transition. [14][15][16] However, the previous theories suggested that the relative strength of D t and carrier-carrier interaction in the system determine the physical origin of MIT. [17][18][19][20] In 2D layer materials, the strength of carrier-carrier interaction and disorders induced by interface traps, and defects can be modulated by controlling the thickness of the 2D channel, substrate engineering, and surface passivation. [2,21] In general, carrier-carrier interactions decrease with reducing thickness while localized D t increases significantly. Therefore, different kinds of transition mechanisms in 2D layered materials are expected depending on the thickness of the flake and the corresponding interface quality. Previously, it has been reported that the D t drastically increases when employing thin flakes since thinner 2D flakes are more susceptible to interface disorders than their thicker counterparts. [6,7,22] Thus, it is difficult to correctly identify the origin of MIT in a 2D material system when both carrier-carrier interactions and a large amount of localized trap states (≈10 13 cm -2 eV -1 ) induced from the channel and channel-gate dielectric interface effects come into play.In the past, some efforts have been made to explain the MIT in 2D MoS 2 , [23][24][25][26] ReS 2 , [27] CuInSe, [28] and WSe 2 . [29] However, most of these studies were limited to a certain channel thickness. Although a few studies have reported MIT in 2D materials, [23,[26][27][28][29][30] how localized D t interplays near a transition point with varying thickness of 2D flakes remains unclear. There is a need to systematically analyze the underlying mechanism of MIT with different thicknesses of 2D channels. Therefore, the objective of this study was to systematically investigate the MIT behavior observed in 2D WSe 2 devices by varying the thickness Localized trap density (D t ) at the 2D channel-gate dielectric interface and its relative strength to carrier-carrier interactions depending on the thickness of the 2D channel can determine the nature of a metal-insulator transition (MIT) in 2D materials. Here, the MIT occurring in WSe 2 devices is systematically analyzed by varying the WSe 2 thickness from ≈20 nm to monolayer to explore the effects of D t on MIT. The corresponding critical carrier density increases from ≈8.30 × 10 11 to 9.45 × 10 12 cm -2 and D t from ≈6.0...

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Section: Introductionmentioning

confidence: 99%

Metal–Insulator Transition Driven by Traps in 2D WSe₂ Field‐Effect Transistor

Ali

Taqi

Ngo

et al. 2022

Adv Elect Materials

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“…The remarkable features of metal selenide nanoparticles include their surface-to-volume ratios, optical and field emission properties, and photocatalytic activity. Based on these properties, metal selenides are being exploited in various fields including field-effect transistors [453], light-emitting diodes (LED) [454], solar cells [455], and wastewater remediation [456]. The commonly utilized metal selenides include ZnSe [457], CdSe [458], SnSe [459], PbSe [460], FeSe 2 [461], CuSe [462], and CdTe [463].…”

Section: Functionalized Metal Selenide Nanomaterialsmentioning

confidence: 99%

Covalent and Non-covalent Functionalized Nanomaterials for Environmental Restoration

et al. 2022

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Nanotechnology has emerged as an extraordinary and rapidly developing discipline of science. It has remolded the fate of the whole world by providing diverse horizons in different fields. Nanomaterials are appealing because of their incredibly small size and large surface area. Apart from the naturally occurring nanomaterials, synthetic nanomaterials are being prepared on large scales with different sizes and properties. Such nanomaterials are being utilized as an innovative and green approach in multiple fields. To expand the applications and enhance the properties of the nanomaterials, their functionalization and engineering are being performed on a massive scale. The functionalization helps to add to the existing useful properties of the nanomaterials, hence broadening the scope of their utilization. A large class of covalent and non-covalent functionalized nanomaterials (FNMs) including carbons, metal oxides, quantum dots, and composites of these materials with other organic or inorganic materials are being synthesized and used for environmental remediation applications including wastewater treatment. This review summarizes recent advances in the synthesis, reporting techniques, and applications of FNMs in adsorptive and photocatalytic removal of pollutants from wastewater. Future prospects are also examined, along with suggestions for attaining massive benefits in the areas of FNMs.

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“…The field effect mobility of the CIS nanoflakes was estimated to be 30.4 cm 2 V −1 s −1 , which was comparable with that of mechanically exfoliated CuIn 7 Se 11 . [28,47] As shown in Figure 3d, the devices also exhibited a type of current rectification behavior, which was much obvious at V G = 0 V (Figure 3e). The rectification coefficient of the device was calculated to be ≈120 at V DS = ±3 V. To investigate the nature of the contact between graphene and the CIS nanoflake, Kelvin probe force microscopy (KPFM) was performed to measure the surface potential across the graphene/CIS interface.…”

Section: Resultsmentioning

confidence: 77%

“…The field effect mobility of the CIS nanoflakes was estimated to be 30.4 cm 2 V −1 s −1 , which was comparable with that of mechanically exfoliated CuIn 7 Se 11 . [ 28,47 ]…”

Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of 2D Ternary Copper–Indium–Selenide Nanoflakes for High‐Performance Near‐Infrared Photodetectors

Gan

Hao

Liu

et al. 2022

Advanced Optical Materials

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and chemical properties, including dangling-bond-free surface, atomic thickness, flexibility, high mobility, and tunable band gap. [1][2][3][4] These merits lead 2D materials to be expected to replace traditional photodetectors with the drawbacks of fragile quality, limited pixel size, and low-temperature operation in infrared region. [5][6][7] 2D layered materials have demonstrated attractive photoelectric properties, such as broadband detection, high photoresponsivity, high external quantum efficiency (EQE), high specific detectivity, and fast photoresponse, and thus could be promising candidates for future photodetectors in flexible electronics, biological imaging, and environmental monitoring. [8][9][10][11] However, the efficiency of photon trapping in 2D materials is relatively low. [12] Lots of efforts have been taken to improve the efficiency of photon trapping, such as constructing heterostructures with n-dimensional (n = 0, 1, 2) materials. [1] On the other hand, searching for new members of more photon-sensitive 2D materials is another effective way to improve the photodetector characteristics. [13][14][15] Initially, research was focused on single or binary elemental 2D materials, such as black phosphorus and transition metal dichalcogenides. Subsequently, ternary 2D materials have attracted increasing attention because of the flexibility to tune their composition and the emerging intriguing physical properties. [15][16][17] Devices based on ternary layered materials have exhibited outstanding photoelectric characteristics, which indicates that ternary 2D materials have promising applications in future photoelectric devices. [14,15] The copper-indium-selenium (CIS) system is composed of a series of typical ternary materials. The structure and physical properties of CIS can be tuned by changing the ratio of Cu/ In, and CIS materials are widely used as a light absorption layer in solar-energy applications. [18][19][20][21] Normally, CIS structures are n-type semiconductors with a direct band gap, except for CuInSe 2 which is a p-type semiconductor, and their Hall mobilities can reach 2.3 × 10 3 cm 2 V −1 s −1 . [22][23][24][25] CIS compounds usually have a chalcopyrite structure with different ordered vacancies. When the Cu/In ratio is between 1:5 and 1:9, the CIS system can contain layered structures. [17] Layered CIS nanoflakes such as CuIn 7 Se 11 can be exfoliated from the bulk single crystals, and they have been constructed into 2D semiconductors are promising for future photodetectors because of their dangling-bond-free surface, atomic thickness, tunable bandgap, high mobility, and flexible nature. However, the low light absorption is one of the main limits for the practical applications of 2D materials. Lots of efforts have been taken to optimize the light absorption, for example, constructing heterojunctions and exploring more photo-sensitive 2D materials. Here, the epitaxial growth of layered copper-indium-selenide (CIS) nanoflakes is realized by chemical vapor deposition. The CIS nanoflakes ar...

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Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors

Cited by 23 publications

References 71 publications

Metal–Insulator Transition Driven by Traps in 2D WSe₂ Field‐Effect Transistor

Metal–Insulator Transition Driven by Traps in 2D WSe₂ Field‐Effect Transistor

Covalent and Non-covalent Functionalized Nanomaterials for Environmental Restoration

Epitaxial Growth of 2D Ternary Copper–Indium–Selenide Nanoflakes for High‐Performance Near‐Infrared Photodetectors

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Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors

Cited by 23 publications

References 71 publications

Metal–Insulator Transition Driven by Traps in 2D WSe2 Field‐Effect Transistor

Metal–Insulator Transition Driven by Traps in 2D WSe2 Field‐Effect Transistor

Covalent and Non-covalent Functionalized Nanomaterials for Environmental Restoration

Epitaxial Growth of 2D Ternary Copper–Indium–Selenide Nanoflakes for High‐Performance Near‐Infrared Photodetectors

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Product

Resources

About

Metal–Insulator Transition Driven by Traps in 2D WSe₂ Field‐Effect Transistor

Metal–Insulator Transition Driven by Traps in 2D WSe₂ Field‐Effect Transistor