Determination of junction depths for phosphorous diffused in silicon

French, C.S.; Belman, D.P.; Kardes, D.E.; Hendricks, R. W.

doi:10.1109/ugim.2001.960293

Cited by 2 publications

(5 citation statements)

References 7 publications

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“…As reported elsewhere, we have determined the distribution of P in Si by SIMS [4]. From 13 separate determinations in five different wafers in which the drive-in time was varied from 25 to 65 minutes at 1 100°C, we have found that the data all fit a universal curve where the normalized concentration is plotted versus x/2&.…”

Section: Introductionmentioning

confidence: 71%

“…5~1 0 '~ P atomslcc when pre-deposition is performed at 810°C. Furthermore, we have found that there is a small, but non-negligible effect of pre-deposition and furnace ramp-up and ramp-down [4]. Using parameters defined in date with changes we make in the program.…”

Section: Applicationmentioning

confidence: 98%

“…Text boxes allow the user to enter the surface concentration of the dopant, the background doping level, the diffusion time and temperature, and other parameters. Of particular interest, we allow the insertion of an effective (Dt) term that allows for the correction of diffusion furnace ramp-up and cooldown, as described elsewhere [4]. A typical screen shot is shown in Figure 9.…”

Section: Applicationmentioning

confidence: 99%

“…As part of our development, we have experimentally determined the pn junction depth as a function of various processing parameters in our 4-inch silicon wafers diffused with P using a combination of secondary ion mass spectroscopy (SIMS) and sheet resistivity measurements [4]. The resultant data are critical for the design of mask sets from which various semiconductor devices are created for our laboratory.…”

Section: Introductionmentioning

confidence: 99%

“…(From reference[4]. )N ( x , t ) = ( Q / G ) e x p -( x / 2 & )(5)respectively, where No is the surface concentration of the dopant, D is the diffusion coefficient, and Q is the dose.The surface concentration in the limited-source solution isgiven by No = Q/& for all t > 0 .By substituting N , for the left-hand side of Eqs.…”

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confidence: 99%

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An interactive program for determining junction depths in diffused silicon devices

Myers

Meyer²,

DePasquale³

et al.

Proceedings of the Fourteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.01CH37197)

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An interactive program, based on the classical theory of Irvin, has been developed for predicting the junction depth in diffused pn junctions in silicon. Students are able to vary the input parameters (surface concentration, sheet resistivity, and background concentration) of the problem and junction depth versus various processing parameter information is displayed. Supporting information, such as the concentration versus depth profiles of the dopant and the concentralion dependence of the dopant mobility are also available.Our program is based on technology we have developed for a much broader class of interactive problems similar to the one described here. The underlying computational package is written in 100% pure Java. The graphical user interface used is dynamically constructed by parsing a file containing a specified set of XML tags we call XPDL (extensible Problem Descriptor Language), thus making it easy for those with exp-rience writing web pages in HTML to transition into modifjmg the present application or to writing new applications.

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Section: Introductionmentioning

confidence: 71%

Section: Applicationmentioning

confidence: 98%

Section: Applicationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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