The
combination of conductivity, optical transparency, and wide
anodic potential window has driven significant interest in indium
tin oxide (ITO) as an electrode material for electrochemical measurements.
More recently, ITO has been applied to the detection of trace metals
using cathodic stripping voltammetry (CSV), specifically manganese
(Mn). However, the optimization of ITO fabrication for a voltammetric
method such as CSV is yet to be reported, nor have the microstructural
properties of ITO been investigated for CSV. Furthermore, CSV does
not require optical transparency, thereby allowing nontransparent
substrates to be used for deposition. This enables microfabrication
procedures to be expanded and simplified compared to glass or quartz.
Combining this with the profound importance of sensitive, selective
detection of toxic metal ions in environmentally and biologically
relevant samples makes ITO especially attractive. In this work, we
report a thorough investigation of ITO deposition and processing on
silicon (Si) substrates for CSV analysis using Mn as the model analyte.
Several ITO process parameters were examined such as heated deposition
and post-process annealing. Each ITO film was characterized using
a variety of surface, bulk (X-ray diffraction), and electrochemical
measurements. Although each ITO film type showed electrochemical activity,
the heated and annealed (HA) ITO fabrication process yielded superior
results for Mn CSV; a limit of detection (LOD) of 0.1 ppb (1.8 nM)
was obtained. This work exemplifies new applications of ITO as an
electrode material while providing a baseline for trace detection
of toxic metals and other contaminants amenable to detection by CSV.