Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry–Pérot optical filters

Huang, Han; Winchester, K.J.; Liu, Yinong; Hu, Xiao; Musca, Charles; Dell, John; Faraone, Lorenzo

doi:10.1088/0960-1317/15/3/024

Cited by 73 publications

(48 citation statements)

References 15 publications

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“…This approximation is made based on our modeling and experimental results which indicate that the pillar support is sufficiently solid to be represented by the "fixed arm end" boundary condition. A Young's modulus of 97 GPa, which was determined by the 16 , was used for the membrane material, i.e. low temperature silicon nitride (SiN x ) in all the models.…”

Section: Finite Element Modeling Of Tunable Fabry-perot Mems Structuresmentioning

confidence: 99%

“…For the estimation of stress distribution in the membrane, both silicon nitride (SiN x ) L arm structures and cantilever beams of a thickness of 550 nm was fabricated using the following PECVD conditions: deposition temperature of 125 o C, chamber pressure of 875 mtorr, radio frequency power of 75 W and gas flow ratio of 1:10:20 for SiH 4 :NH 3 :N 2 . The method developed in [16] was used to estimate the stress gradient in the SiN x membrane layer. A linear stress gradient was introduced into the FEM beam model.…”

Section: Structural Performancementioning

confidence: 99%

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Mechanical characteristics of filter structures for MEMS adaptive infrared detectors

et al. 2007

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This paper reports the mechanical design and optimization of tunable Fabry-Perot (FP) filter structures for the development of MEMS adaptive infrared detectors using finite element modeling and experimental investigations. The results indicate that the mechanical characteristics of the FP filters are significantly influenced by the structural designs, which eventually affect the filter performance and device integrity.

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Section: Finite Element Modeling Of Tunable Fabry-perot Mems Structuresmentioning

confidence: 99%

Section: Structural Performancementioning

confidence: 99%

Mechanical characteristics of filter structures for MEMS adaptive infrared detectors

et al. 2007

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“…A Berkovich indenter with an included angle of 142.3° and a tip radius of 100 nm was first used to measure the elastic modulus (E) and hardness (H) of GaAs substrate and SiN films using the Oliver-Pharr method [17]. The E and H of the films were calculated from P-h curves of the film/substrate specimens applying a deconvolution method [18][19][20]. The values of E and H are shown in Table 2.…”

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confidence: 99%

Interfacial energy release rates of SiN/GaAs film/substrate systems determined using a cyclic loading dual-indentation method

Huang

2015

Thin Solid Films

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Please cite this article as: Mingyuan Lu, Han Huang, Interfacial energy release rates of SiN/GaAs film/substrate systems determined using a cyclic loading dual-indentation method, Thin Solid Films (2015Films ( ), doi: 10.1016Films ( /j.tsf.2015 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT AbstractOur previous study developed a dual-indentation method for testing the interfacial energy release rate, G in , of the SiN/GaAs film/substrate systems. However, for the film/substrate systems with relatively high interfacial toughness, the dual-indentation method was unable to generate interfacial delamination. In this study, a cyclic loading dual-indentation method was proposed, in which the first monotonic loading in the dual-indentation method was replaced by cyclic loading. It was demonstrated that cyclic loading was effective at inducing delamination in relatively "tough" SiN/GaAs interfaces that were unable to be delaminated by dual-indentation method. The G in values obtained from the cyclic loading indentation were in good agreement with those obtained from the dual-indentation method for the less tough interfaces. The delamination mechanism in the cyclic loading indentation was attributed to the hardening effect on the films induced by cyclic loading, permitting sufficient elastic strain energy to be accumulated to initiate the delamination.Key words: Nanoindentation; delamination; cyclic loading; energy release rate A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT IntroductionThe assessment of the adhesion properties of a thin film is imperative to ensure the reliability of the film/substrate system over its life cycles [1]. As a consequence, there is an increasing demand for developing reliable techniques to measure the interfacial adhesion between a film and a substrate. In the past few decades, significant research effort has been directed towards developing approaches to evaluate the adhesion property [1][2][3][4][5][6][7]. Among the available techniques, indentation enables the investigation of interfacial adhesion of a film/substrate system to be undertaken in a controllable manner by generating interfacial cracks on a sufficiently small scale and at a specific site [8].In our previous work, a dual-indentation method was developed to assess the interfacial adhesion of SiN/GaAs film/substrate systems [9]. This method was successfully applied to the SiN/GaAs film/substrate systems with different interfacial properties. The limitation of the dual-indentation approach was that interfacial delamination must be induced during the first ...

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“…5 The residual stress can affect the effective stiffness of the film, and hence the accurate characterisation of the film's mechanical properties, as well as the performance and reliability of filmbased devices. [6][7][8] A number of techniques, such as wafer curvature measurement, 9 bulge testing, 10-12 X-ray diffraction, 13,14 and Raman spectroscopy, 15 were developed to measure the residual stress of thin films. Nevertheless, these methods have their limitations.…”

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confidence: 99%

“…The effect of clamping conditions will be investigated in detail in our future work. The other possible errors should mainly come from uncertainties in measurement of the diameter and thickness of diaphragms and the density and Poisson's ratio of the film (although the effect of Poisson's ratio should be insignificant 8 ). The irregularity of the diaphragm edge and non-uniformity in diaphragm thickness would also affect the accuracy.…”

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confidence: 99%

A resonant method for determining the residual stress and elastic modulus of a thin film

Wang

Iacopi

et al. 2013

Applied Physics Letters

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By measuring the resonant frequencies of the first two symmetric vibration modes of a circular thin-film diaphragm and solving the Rayleigh-Ritz equation analytically, the residual stress and elastic modulus of the film were determined simultaneously. The results obtained employing this method are in excellent agreement with those obtained numerically in finite element modelling when tested using freestanding circular SiC diaphragms with residual tensile stress. The stress and modulus values are also in reasonably good agreement with those obtained from nanoindentation and wafer curvature measurements, respectively.

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Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry–Pérot optical filters

Cited by 73 publications

References 15 publications

Mechanical characteristics of filter structures for MEMS adaptive infrared detectors

Mechanical characteristics of filter structures for MEMS adaptive infrared detectors

Interfacial energy release rates of SiN/GaAs film/substrate systems determined using a cyclic loading dual-indentation method

A resonant method for determining the residual stress and elastic modulus of a thin film

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