Determination of metal contact recombination parameters for silicon wafer solar cells by photoluminescence imaging

Shanmugam, Vinodh; Mueller, Thomas; Aberle, Armin G.; Wong, Johnson

doi:10.1016/j.solener.2015.05.010

Cited by 41 publications

(19 citation statements)

References 12 publications

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“…There are several studies in recent years to accurately determine the metal contact recombination parameters using specially designed test structures [9][10][11][12]. The metal contact recombination parameters depend on the phosphorus emitter profile itself.…”

Section: Introductionmentioning

confidence: 99%

“…The metal contact recombination parameters depend on the phosphorus emitter profile itself. In this work, we analyse the intensity-dependent photoluminescence (PL) images on front metallization test patterns consisting of regions of different metal contact fractions [12], solar cells with no front metallisation, and solar cells with H-pattern front metallization, to accurately extract the metal contact recombination parameters. For each of these cells, a detailed finite element model (FEM) of the cell front plane with the exact dimensions of the metallization pattern is constructed using Griddler, a dedicated FEM solver for solar cells [13].…”

Section: Introductionmentioning

confidence: 99%

“…For each of these cells, a detailed finite element model (FEM) of the cell front plane with the exact dimensions of the metallization pattern is constructed using Griddler, a dedicated FEM solver for solar cells [13]. Griddler solves the voltage distribution in the cell plane and converts it into the PL intensity spatial distribution, via a calibration factor determined from the Hpattern solar cell probed voltage at low illumination intensity [12]. Simulation of the PL spatial distribution and comparing simulated images to actual images then allows the metal induced recombination saturation current densities to be extracted when a best fit is achieved.…”

Section: Introductionmentioning

confidence: 99%

“…The key contribution of this work is the application of the analysis routine of Ref. [12] to industrial multicrystalline silicon (multi-Si) wafer solar cells with different lightly doped phosphorus emitters.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Impact of the phosphorus emitter doping profile on metal contact recombination of silicon wafer solar cells

Shanmugam

Khanna

Basu

et al. 2016

Solar Energy Materials and Solar Cells

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Impact of the phosphorus emitter doping profile on metal contact recombination of silicon wafer solar cells

Shanmugam

Khanna

Basu

et al. 2016

Solar Energy Materials and Solar Cells

Self Cite

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“…The different physical processes involved in forming metal contacts to cells are expected to impact the accuracy of simulation models used to estimate the J 01,cont (such as depicted in Figure ) and suggest that it will be important in the future to accurately measure contact recombination for Ni/Cu plated cells in order to also take into account non‐ideal recombination which may be incurred through the metal contact, and to draw comparisons with screen‐printed Ag contacts …”

Section: Challenges For Copper‐plated Silicon Solar Cellsmentioning

confidence: 99%

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

Lennon

Colwell

Rodbell

2018

Progress in Photovoltaics

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Copper‐plated interconnects were widely adopted for volume manufacture of integrated circuits after more than a decade of intensive research to demonstrate that use of Cu would not impact device reliability. However, although Cu‐plated metallisation promises significantly reduced costs for Si photovoltaics, its adoption in manufacturing has not gained the same traction. This review identifies some key challenges facing the introduction of Cu‐plated metallisation for Si photovoltaics. These include the following: (1) increased carrier recombination due to the use of Cu for metal contact formation; (2) reduced module reliability due to adhesion or contact integrity failures; and (3) limited availability of cost‐effective processes and equipment for metal plating. For integrated circuits, Cu's low electrical resistance and high resistance to electromigration provided an impetus for the large investment in process development that was required to realise Cu‐plated interconnects. However, the technical advantages of using Cu for Si solar cell contacts are not as compelling, as solar cells can tolerate larger feature sizes thus reducing the criticality of the contact metal's conductivity and electromigration properties. Additionally, for Si photovoltaics, low cost is paramount, and new challenges arise from the need for modules to absorb light and operate in the field for 25+ years in diverse outdoor climates. However, with the scale of Si photovoltaic manufacturing expected to increase dramatically in the next decade, the use of large quantities of silver for cell metallisation will provide an incentive to address reliability concerns regarding the use of Cu for Si photovoltaic metallisation.

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Enhanced Carrier Selectivity and Superior Passivation in Cost‐Effective Heterogeneous Hybrid Transport Layers for Next Generation Silicon Solar Cells

Kaur,

Sridharan,

Dutta

et al. 2024

Adv Funct Materials

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Hybrid hole transport layers (HHTLs) consisting of‐a low‐cost, low‐temperature, dopant‐free, organic, hole‐selective poly(3,4‐ethylenedioxythiophene):polystyrene sulphonate (PEDOT:PSS) and an inorganic homogenous tunnel oxides (HoTOs), such as SiOx, TiOx, and AlOx have allowed significant improvements in carrier selectivity as well as in power and cost efficiency. These key parameters can be further improved by introducing heterogeneous tunnel oxides (HeTOs), formed of two different inorganic oxides. This work examines the potential of heterogeneous HHTLs and their impact on passivation as well as on the interfacial properties in silicon solar cells. HeTOs of SiOx/TiOx and SiOx/AlOx with negative fixed charge are studied and optimized. A heterogeneous HHTL with AlOx (>1.5 nm) resulted in a high lifetime (1.2 ms), low surface recombination velocity, and improved surface band bending at the interface due to the presence of higher negative fixed charge (1012 cm−2) within these layers. The passivation properties further improved on light soaking and annealing due to oxidation of PSS and AlOx/SiOx. Overall, these HHTLs demonstrated a hole selectivity (S10) of 12.5 and very high efficiencies up to of 26.1%, surpassing homogenous‐SiOx/PEDOT:PSS by 1.4%.

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Determination of metal contact recombination parameters for silicon wafer solar cells by photoluminescence imaging

Cited by 41 publications

References 12 publications

Impact of the phosphorus emitter doping profile on metal contact recombination of silicon wafer solar cells

Impact of the phosphorus emitter doping profile on metal contact recombination of silicon wafer solar cells

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

Enhanced Carrier Selectivity and Superior Passivation in Cost‐Effective Heterogeneous Hybrid Transport Layers for Next Generation Silicon Solar Cells

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