Determination of minority-carrier generation lifetime in beam-recrystallized silicon-on-insulator structure by using a depletion-mode transistor

Vu, D.P.; Pfister, J. C.

doi:10.1063/1.95939

Cited by 39 publications

(7 citation statements)

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“…This information would not otherwise be accessible solely from the mathematical fit used in our previous paper [ 3 ]. Moreover, this time constant value strongly agrees with previous reports of the time scale of photo-generation and electron–hole pair separation in other silicon samples [ 9 , 15 – 16 ].…”

Section: Resultssupporting

confidence: 92%

Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation

Garrillo¹,

Grévin²,

Borowik³

2018

Beilstein J. Nanotechnol.

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In recent years, the investigation of the complex interplay between the nanostructure and photo-transport mechanisms has become of crucial importance for the development of many emerging photovoltaic technologies. In this context, Kelvin probe force microscopy under frequency-modulated excitation has emerged as a useful technique for probing photo-carrier dynamics and gaining access to carrier lifetime at the nanoscale in a wide range of photovoltaic materials. However, some aspects about the data interpretation of techniques based on this approach are still the subject of debate, for example, the plausible presence of capacitance artifacts. Special attention shall also be given to the mathematical model used in the data-fitting process as it constitutes a determining aspect in the calculation of time constants. Here, we propose and demonstrate an automatic numerical simulation routine that enables to predict the behavior of spectroscopy curves of the average surface photovoltage as a function of a frequency-modulated excitation source in photovoltaic materials, enabling to compare simulations and experimental results. We describe the general aspects of this simulation routine and we compare it against experimental results previously obtained using single-point Kelvin probe force microscopy under frequency-modulated excitation over a silicon nanocrystal solar cell, as well as against results obtained by intensity-modulated scanning Kelvin probe microscopy over a polymer/fullerene bulk heterojunction device. Moreover, we show how this simulation routine can complement experimental results as additional information about the photo-carrier dynamics of the sample can be gained via the numerical analysis.

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Section: Resultssupporting

confidence: 92%

Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation

Garrillo¹,

Grévin²,

Borowik³

2018

Beilstein J. Nanotechnol.

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“…In fact, some results in this direction were already envisaged in some early ID transient studies. 48,49) This is further supported by the exponential decrease in transient time with increasing negative VBG biases (Fig. 5), which is associated with the GIDL exponential behavior, for which the backgate-to-drain voltage drop and BOX thickness determine the relevant surface electric field.…”

Section: Vbg and "Switch-off" Id Transientsmentioning

confidence: 64%

Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal–Oxide–Semiconductor Field-Effect Transistors

Rafı́

Mercha

Simoen

et al. 2004

Jpn. J. Appl. Phys.

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In this study, we analyze the impact of back-channel radiation-induced leakage and backgate bias on switch-off drain current transients of thin-gate-oxide partially depleted (PD) silicon-oninsulator (SOI) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). The presence of radiation-induced positive trapped charges in the buried oxide after 60 MeV proton irradiation is found to reduce the "switch-off" transient times for gate voltages above and below the front-gate threshold voltage for body-to-gate electron valence band tunnelling. An increase in steady-state drain current and an increase in the amplitude of weak inversion drain current transients are observed. A similar effect is observed when applying a positive bias to the back-gate, which is found to generate an "irradiation-like" subthreshold leakage. The observed switch-off drain current transient behavior is explained by taking into account an edge parasitic back-channel transient component, which is added to the conventional front-gate drain current transient.

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“…One of the most unique advantages of our model compared to previous strong inversion analysis [4][5][6][7] is that no knowledge is required on the carrier mobility and the effective channel length for the generation parameter extraction. In order to highlight this feature, we artificially forced different constant mobility values in Atlas, for an L g ϭ 0.1 m realistic structure and then extract geff , which was found independent on the input carrier mobility.…”

Section: Discussionmentioning

confidence: 99%

“…2,3 The induced ''generation'' transient is analytically modeled in two different switching regimes that correspond to: ͑i͒ real transistor operation switching ͑on to off state͒ and (ii) to a characterization-dedicated method ͑similar to the deep-depletion pulsing͒. The model is applied to the extraction of the generation lifetime in submicrometer PD SOI devices and the results are compared to other similar techniques [4][5][6][7] used in strong inversion. In opposition to these approaches, our model offers the outstanding advantage that no knowledge is necessary on the carrier mobility and on the effective channel length, which can be difficult to extract in short channel lengths.…”

mentioning

confidence: 99%

Compact Modeling of Weak Inversion Generation Transients in SOI MOSFETs

Ionescu¹,

Munteanu

Hefyene³

et al. 2004

J. Electrochem. Soc.

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Generation-type drain current transients in advanced ͑down to 50 nm gate length͒ floating-body, partially depleted silicon on insulator ͑SOI͒ metal oxide semiconductor field effect transistors ͑MOSFETs͒ are investigated by 2D numerical simulation in weak inversion operation. An original compact analytical model is derived for the pure transient weak inversion operation and validated on both elementary and realistic 2D structures. The proposed subthreshold transient compact model allows accurate prediction of the influence of the generation lifetime, surface velocity ͑or interface state density͒, oxide thickness, and substrate doping on the floating-body-related transient behavior and duration, which is essential for advanced transistor optimization and subsequent circuit applications. Moreover, our model is a unique, robust tool for the electrical characterization of submicrometer SOI transistors because it allows the carrier lifetime extraction independently of the channel carrier mobility and device effective gate length. Finally, the model is successfully used in high-temperature operation for drain current transient prediction and generation lifetime extraction.

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Determination of minority-carrier generation lifetime in beam-recrystallized silicon-on-insulator structure by using a depletion-mode transistor

Cited by 39 publications

References 0 publications

Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation

Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation

Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal–Oxide–Semiconductor Field-Effect Transistors

Compact Modeling of Weak Inversion Generation Transients in SOI MOSFETs

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