Determination of phosphorus contamination during antimony implantation by measurement and simulation

Microwave plasma doping: Arsenic activation and transport in germanium and silicon

“…This can be explained by the so-called "carrier spilling effect" which is a shift of the p-n junction at the surface of the semiconductor due to sample bevelling for SRP analysis. 41) Therefore, the true carrier concentration profile for 90-120 nm depth range should be derived from the SIMS As profile.…”

Improved determination of phosphorus contamination during ion implantation by SRP and simulations

“…Our one year monitoring of the implanter has shown a wide range of cross-contamination and its effect on N c-SRP (x) profiles (Figs. [6][7][8][9]. We have shown that cross-contamination can result into a p-n junction shift up to 4 mm that presents an 80% deeper junction.…”

“…Improvement of the method proposed in [7] is incorporation of the carrier spilling correction by comparing the N c-SRP (x) profiles with calculated N c-bevel (x) profiles. This is much more precise than the previous direct comparison with N dt (x) profiles.…”

“…Compared to our previous model [7] we have implemented correction of data for the carrier spilling effect to increase preciseness of this method. We also present data obtained during one year monitoring the implanter showing how dramatically the cross-contamination can change during that time.…”