Determination of proximity effect parameters by means of CD-linearity in sub 100 nm electron beam lithography

Hauptmann, Marc; Choi, Kwang Hyun; Jaschinsky, Philipp; Hohle, Christoph; Kretz, Johannes; Eng, Lukas M.

doi:10.1016/j.mee.2008.12.053

Cited by 5 publications

(4 citation statements)

References 4 publications

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“…Proximity effect can be expressed by the point spread function (PSF) which represents the absorbed energy distribution in radial distance from the point of incidence after point exposure [5]. The PSF are usually obtained by Monte Carlo simulation using various algorithms containing physical model of electron interactions in defined materials (mostly two layer sandwichsubstrate and resist) [6].…”

Section: Introductionmentioning

confidence: 99%

PEC Reliability in 3D E-beam DOE Nanopatterning.

2015

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Section: Introductionmentioning

confidence: 99%

PEC Reliability in 3D E-beam DOE Nanopatterning.

2015

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“…On the other hand, fabrication of such small structures is at the limit of what is possible today. One of the major challenges is that during the electron beam fabrication procedure, the proximity effect makes it very difficult to produce sharp edges [14,15]. Hence, the real fabricated structures differ considerably from ideal structures, intended to be fabricated.…”

Section: Introductionmentioning

confidence: 99%

Investigating the influences of the precise manufactured shape of dipole nanoantennas on their optical properties

Moosmann¹,

Sigurdsson²,

Wissert³

et al. 2013

Opt. Express

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Fabrication of small nanoantennas with high aspect ratios via electron beam lithography is at the current technical limit of nanofabrication and hence significant deviations from the intended shape of small nanobars occur. Via numerical simulations, we investigate the influence of geometrical variations of gap nanoantennas, having dimensions on the order of only a few tens of nanometers. We show that those deviations have a significant influence on the performance of such nanoantennas. In particular, their resonance wavelength as well as the magnitude of absorption and scattering cross section and the electric field distribution in the near field is strongly altered. Our findings are thus of importance for applications based on near field as well as those based on far field interactions with nanoantennas and have to be carefully and individually considered in both cases.

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“…The gate, V01, and M1-level designs can be easily and independently modified in layout. Using appropriate proximity effect correction, 22 new designs are fractured and patterned in e-beam lithography without needing substantial development, if any, to optimize exposure or develop conditions. As an example, we show in Figure 2B SEM images of three different devices patterned in one reticle with varying P/X dimensions but fixed pitch and fixed V01/ M1-level design.…”

mentioning

confidence: 99%

A Flexible Design Platform for Si/SiGe Exchange-Only Qubits with Low Disorder

Choi

et al. 2021

Nano Lett.

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Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin “SLEDGE”, features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables nontrivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlapping gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data.

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Determination of proximity effect parameters by means of CD-linearity in sub 100 nm electron beam lithography

Cited by 5 publications

References 4 publications

PEC Reliability in 3D E-beam DOE Nanopatterning.

PEC Reliability in 3D E-beam DOE Nanopatterning.

Investigating the influences of the precise manufactured shape of dipole nanoantennas on their optical properties

A Flexible Design Platform for Si/SiGe Exchange-Only Qubits with Low Disorder

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