Determination of quasi-Fermi level at the metal–semiconductor interface in a forward-biased schottky barrier diode

Abstract

The position of the electron quasi‐Fermi level at the metal–semiconductor boundary in the semiconductor space charge layer is determined in the case when the diffusion theory of electron transport is appropriate and when the electron mobility in the space charge layer is constant. The position of the electron quasi‐Fermi level at the same boundary is determined also in the case when the thermionic theory of electron transport is appropriate and when the electron velocity in the space charge layer is constant.