Tungsten is deposited on GaAs by WCl6 reaction with H2. The GaAs substrate is heated to 400 °C during the deposition. The forward current of W‐n‐GaAs structures prepared in such way increases exponentially over five decades in accordance with the theory of the thermionic electron emission from the semiconductor to the metal. The Schottky barrier height is obtained from the I–U and the C–U measurements and in both the cases it is (0.81 ± 0.01) eV. The reverse current is connected with the generation current in the space‐charge region of the GaAs Schottky barrier structure.
The position of the electron quasi‐Fermi level at the metal–semiconductor boundary in the semiconductor space charge layer is determined in the case when the diffusion theory of electron transport is appropriate and when the electron mobility in the space charge layer is constant. The position of the electron quasi‐Fermi level at the same boundary is determined also in the case when the thermionic theory of electron transport is appropriate and when the electron velocity in the space charge layer is constant.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.