Determination of Si/SiO/sub 2/ interface roughness using weak localization

Anderson, Warren; Lombardi, D.R.; Wheeler, R. G.; Ma, T.P.

doi:10.1109/55.225570

Cited by 7 publications

(18 citation statements)

References 13 publications

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“…Hence the adiabaticity conditions can be expressed in terms of the observable parameters as ∆ AFM /L ≪ 1 and (ℓ∆ AFM )/L 2 ≪ 1 and are seen to be very well satisfied for both samples of Ref. [6].…”

Section: Born-oppenheimer Analysismentioning

confidence: 71%

“…To check the validity of the adiabaticity conditions we can use the atomic force microscope images of the siliconoxide interface presented in Ref. [6]. These images reveal that the height fluctuations of the interface follow a Gaussian distribution parameterized by ∆ AFM , the root mean square height fluctuation, and L, the correlation distance.…”

Section: Born-oppenheimer Analysismentioning

confidence: 99%

“…R. G. Wheeler and co-workers have proposed that magnetoresistance measurements on a MOSFET in the weaklocalization regime can be used as a non-destructive probe of its interface roughness [5,6]. They and others have carried out experiments that demonstrate the feasibility of making the needed measurements [5][6][7]. The present work contributes to this program by providing the precise relationship between the interface roughness parameters and the measured magnetoresistance.…”

Section: Introductionmentioning

confidence: 96%

“…It is therefore of technological interest to characterize the roughness. R. G. Wheeler and co-workers have proposed that magnetoresistance measurements on a MOSFET in the weaklocalization regime can be used as a non-destructive probe of its interface roughness [5,6]. They and others have carried out experiments that demonstrate the feasibility of making the needed measurements [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

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Random Berry phase magnetoresistance as a probe of interface roughness in Si MOSFET’s

Mathur

Baranger

2001

Phys. Rev. B

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The effect of silicon-oxide interface roughness on the weaklocalization magnetoconductance of a silicon MOSFET in a magnetic field, tilted with respect to the interface, is studied. It is shown that an electron picks up a random Berry's phase as it traverses a closed orbit. Effectively, due to roughness, the electron sees an uniform field parallel to the interface as a random perpendicular field. At zero parallel field the dependence of the conductance on the perpendicular field has a well known form, the weak-localization lineshape. Here the effect of applying a fixed parallel field on the lineshape is analyzed. Many types of behavior are found including homogeneous broadening, inhomogeneous broadening and a remarkable regime in which the change in lineshape depends only on the magnetic field, the two length scales that characterize the interface roughness and fundamental constants. Good agreement is obtained with experiments that are in the homogeneous broadening limit. The implications for using weak-localization magnetoconductance as a probe of interface roughness, as proposed by Wheeler and coworkers, are discussed.

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Section: Born-oppenheimer Analysismentioning

confidence: 71%

Section: Born-oppenheimer Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Random Berry phase magnetoresistance as a probe of interface roughness in Si MOSFET’s

Mathur

Baranger

2001

Phys. Rev. B

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“…3(d)), which is $1.72 times higher than that (300 nm) reported in EG on Siface SiC. 1 This WL behaviour also distinguishes EG from graphite and sheds light on its utilization as a powerful tool in many applications such as determination of interface roughness, 36 studying various scattering phenomena 37 in solids such as Kondo effect and single electron tunneling effect.…”

mentioning

confidence: 83%