Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Cherkashin, Nikolay; Reboh, S.; Hÿtch, Martin; Claverie, A.; Preobrazhenskii, V.V.; Putyato, М. А.; Semyagin, B. R.; Chaldyshev, V. V.

doi:10.1063/1.4804380

Cited by 35 publications

(33 citation statements)

References 26 publications

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“…The experimental data presented above reveal considerable changes in the intensity and spectral shape of the PL from InAs QDs when overgrown by GaAs at low temperature. This fact is, in general, consistent with TEM study of a similar InAs QD, which showed the GaAs overgrowth process making changes in the InAs QD shape and chemical composition. In order to make this statement more specific let us compare the overgrowth procedures for the samples.…”

Section: Discussionsupporting

confidence: 89%

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Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

Kosarev

Берт

Неведомский

et al. 2019

Physica Status Solidi (b)

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Optical and structural study of a system of InAs quantum dots (QDs) buried under low‐temperature (LT) grown GaAs layers with different buffer layers in between has been performed. It has been shown that the buffer is very important for both atomic structure and electronic processes. The direct overgrowth at low temperature causes the formation of misfit dislocation and related drop of the photoluminescence (PL) intensity from the InAs QDs. The defect formation is eliminated by using either 5 nm thick GaAs or combined AlAs/GaAs buffer. Strong changes in the QD‐related PL intensity and line shape are experimentally revealed in the case of thin GaAs buffer. These changes are quantitatively described in terms of electron tunneling from the InAs QDs through the GaAs barrier to the continuum of states in the LT‐GaAs. When a 2.5 nm thick portion of the GaAs buffer is substituted by AlAs, the barrier becomes nontransparent for the electron tunneling from the ground states in the InAs QDs. As a result, the QD‐related PL becomes much stronger and the line shape becomes similar to that from the reference sample in the photon energy range of ground state transitions.

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Section: Discussionsupporting

confidence: 89%

“…The approximate calculation results were then justified by numerical solution of the Schrödinger equation for 3D pyramidal InAs QD surrounded by GaAs. The precise geometry and In distribution in the QDs were taken from previous microscopical study . Strain in the InAs/GaAs system was taken into account as described in ref.…”

Section: Discussionmentioning

confidence: 99%

Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

Kosarev

Берт

Неведомский

et al. 2019

Physica Status Solidi (b)

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“…The impact of strain on the carrier confinement due to the lattice mismatch between InAs and GaAs materials is also taken into account for the calculation [20]. Hydrostatic and uniaxial strains are given by the following expressions:

ϵ_{h} = ϵ_{x x} + ϵ_{y y} + ϵ_{z z}

and

ϵ_{b} = ϵ_{z z} - \frac{1}{2} (ϵ_{x x} + ϵ_{y y})

where ε b , ε h are hydrostatics and uniaxial strain respectively.…”

Section: Resultsmentioning

confidence: 99%

Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

et al. 2015

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This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The investigated samples are grown by molecular beam epitaxy and characterized by photoluminescence spectroscopy (PL). The QDs optical transition energies have been calculated by solving the three dimensional Schrödinger equation using the finite element methods and taking into account the strain induced by the lattice mismatch. We have considered a lens shaped InAs QDs in a pure GaAs matrix and either with InGaAs strain reducing cap layer or underlying layer. The correlation between numerical calculation and PL measurements allowed us to track the mean buried QDs size evolution with respect to the surrounding matrix composition. The simulations reveal that the buried QDs’ realistic size is less than that experimentally driven from atomic force microscopy observation. Furthermore, the average size is found to be slightly increased for InGaAs capped QDs and dramatically decreased for QDs with InGaAs under layer.

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“…This effect has been described theoretically in Refs. [19][20][21]23, and 24 as well as demonstrated by many growth experiments; 1,2,22,25,26 however, it has not been measured or shown directly so far.…”

mentioning

confidence: 93%

Investigation of deformations and strain fields in silicon matrix structures embedded with vertically stacked Ge(Si) self-assembled islands

Павлов¹,

Bobrov²,

Новиков

et al. 2014

Applied Physics Letters

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Elastic strains have been measured quantitatively and clearly demonstrated, resulting in vertical stacking of Ge(Si) self-assembled islands in a silicon matrix using the geometric phase analysis method. The strains are calculated on the basis of the data on the elemental composition and crystal-lattice distortions. An empirical approach on the basis of the experiment has allowed the determination of geometric phase method in accuracy.

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Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Cited by 35 publications

References 26 publications

Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

Investigation of deformations and strain fields in silicon matrix structures embedded with vertically stacked Ge(Si) self-assembled islands

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