Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Dragounová, Kateřina; Potůček, Z.; Potocký, Štěpán; Bryknar, Z.; Kromka, Alexander

doi:10.1515/jee-2017-0010

Cited by 8 publications

(11 citation statements)

References 24 publications

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“…The linearization of the energy shift dependence from T 4 is consistent with the consolidated interpretative model based on the contraction of the diamond lattice and on the electron-phonon coupling with hard phonon modes [11,[21][22].…”

Section: Figure 2(b)supporting

confidence: 82%

Photo-physical properties of He-related color centers in diamond

Prestopino

Marinelli

Verona

et al. 2017

Applied Physics Letters

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Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm and 560 nm created in three different diamond substrates upon implantation with 1.3 MeV He + ions and subsequent annealing. The spectral features of the HR centers were studied in an "optical grade" diamond substrate as a function of several physical parameters, namely the measurement temperature, the excitation wavelength and the intensity of external electric fields. The emission lifetimes of the 535 nm and 560 nm lines were also measured by means of time-gated photoluminescence measurements, yielding characteristic decay times of (29 ± 5) ns and (106 ± 10) ns, respectively. The Stark shifting of the HR centers under the application of an external electrical field was observed in a CVD diamond film equipped with buried graphitic electrodes, suggesting a lack of inversion symmetry in the defects' structure. Furthermore, the photoluminescence mapping under 405 nm excitation of a "detector grade" diamond sample implanted at a 1×10 10 cm -2 He + ion fluence enabled to identify the spectral features of both the HR emission lines from the same localized optical spots. The reported results provide a first insight towards the understanding of the structure of He-related defects in diamond and their possible utilization in practical applications. MAIN TEXTColor centers in diamond are appealing physical systems for application in emerging quantum technologies. In recent years, a growing interest in this research field led to the discovery, investigation and fabrication of several classes of impurity-related defects [1][2][3][4][5][6][7][8].The formation of optically active defects in diamond upon He implantation followed by annealing in vacuum was recently reported [9]. The spectral features of these defects consist of two narrow emission lines at 536 nm and 560.5 nm, and a phonon sideband in the 572-630 nm spectral range. Following their initial observation in cathodoluminescence (CL) [10,11], their optical activity was investigated in both photoluminescence (PL) and electroluminescence (EL) [9,12]. The need of understanding the possible formation of stable optically active centers, whose current (and still tentative) attribution is based on He incorporation in the diamond lattice, motivates a further investigation of their opto-physical properties. More specifically, the centers have so far been attributed to the He-vacancy complex [13], and density functional theory calculations demonstrated that both this structure and the interstitial He defect could result in stable complexes in the diamond lattice [14]. Apart from this limited body of works, a systematic set of experimental results on the characterization of the ...

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Section: Figure 2(b)supporting

confidence: 82%

Photo-physical properties of He-related color centers in diamond

Prestopino

Marinelli

Verona

et al. 2017

Applied Physics Letters

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“…It can be seen that the broadening of the ZPL is about 5 times larger than the corresponding shift. A similar trend has been reported for dependence of the ZPL on temperature 31 . The heating is related to a high concentration of silicon in the primary mixture for crystal growth (see Methods).…”

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confidence: 88%

Ultrasensitive All-Optical Thermometry Using Nanodiamonds with a High Concentration of Silicon-Vacancy Centers and Multiparametric Data Analysis

et al. 2019

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Nanoscale thermometry is of paramount importance to study primary processes of heat transfer in solids and is a subject of hot debate in cell biology. Here we report ultrafast temperature sensing using all-optical thermometry exploiting synthetic nanodiamonds with silicon-vacancy (SiV) centres embedded at a high concentration.Using multi-parametric analysis of photoluminescence (PL) of these centres, we have achieved an intrinsic noise floor of about 10 mK Hz −1/2 , which is a thousand-fold increase in the readout speed in comparison to the current record values demonstrated with all-optical methods of comparable spatial-resolution and precision. Our thermometers are smaller than 250-nm across but can detect a 0.4 • C change of tem-

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“…The chemical composition and PL activity of Si-V centres in NCD films were studied by Raman and PL spectroscopies at room temperature using a Renishaw In Via Reflex Raman spectrometer with CCD camera and 442 nm excitation wavelength. Temperature dependent emission spectra of photoluminescence excited by a 442 nm line of He-Cd laser were measured in the reflection geometry using a set-up based on a Carl Zeiss SPM2 monochromator [20]. The spectra were taken on the samples fixed to a copper holder of a closed-cycle helium refrigerator (APD Displex SCW-202) within the temperature range 11-300 K. Photoluminescence intensity in the 710-780 nm spectral region was measured with a cooled RCA31034 photomultiplier (GaAs photocathode) operating in the photon-counting mode.…”

Section: Experimental Partmentioning

confidence: 99%

Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films

Dragounová

Ižák

Kromka

et al. 2017

Journal of Electrical Engineering

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Nanocrystalline diamond films with bright photoluminescence of silicon-vacancy colour centres have been grown using a microwave plasma enhanced CVD technique. The influence of substrate material (quartz, Al 2 O 3 , Mo and Si) on a reproducible fabrication of diamond thin films with Si-V optical centres is presented. Film quality and morphology are characterized by Raman spectroscopy and SEM technique. SEM shows well faceted diamond grains with sizes from 170 to 300 nm. The diamond peak is confirmed in Raman spectra for all samples. In the case of the quartz substrate, a redshift of the diamond peak is observed ( ≈ 3.5 cm −1 ) due to tension in the diamond film. The steady-state photoluminescence intensity was measured in the temperature range from 11 K to 300 K. All spectra consist of a broad emission band with a maximum near 600 nm and of a sharp zero phonon line in the vicinity of 738 nm corresponding to Si-V centres that is accompanied with a phonon sideband peaking at 757 nm. Activation energies for the thermal quenching of Si-V centre photoluminescence were determined and the effect of the substrate on photoluminescence properties is discussed too.K e y w o r d s: diamond, Si-V centre, photoluminescence, microwave-plasma enhanced CVD, activation energy

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Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Cited by 8 publications

References 24 publications

Photo-physical properties of He-related color centers in diamond

Photo-physical properties of He-related color centers in diamond

Ultrasensitive All-Optical Thermometry Using Nanodiamonds with a High Concentration of Silicon-Vacancy Centers and Multiparametric Data Analysis

Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films

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