Determination of the angle of incidence in a Cameca IMS‐4f SIMS instrument

SIMS Analyses of III-V Semiconductor Quantum-well and Superlattice Heterostructures

“…For the primary beam energies ranged from 1.5 O 2k eV (0.75 keV per O`) to 10 keV (5 keV per O`), while the Cs`beam impacted on the surface with an energy of 5.5 keV. The instrument geometry does not allow the beam energy to be independent of the angle of incidence ; useful ways to determine the relation between the primary energy and the angle of incidence have been reported by Meuris et al 10 and Zalm et al 5 The SIMS analyses were supported by PL, HRXRD and TEM. The details of measurements and experimental settings are reported elsewhere.9,11…”

High Depth Resolution SIMS Analysis with Low-energy Grazing O2+ Beams

“…16 Eventually, that will often be the limiting factor for the depth resolution. On the IX70S, however, the incidence angle can be selected, o †ering the possibility to use the optimal angle and, thus, retain a Ñat crater bottom.…”

“…One important factor responsible for the slanted bottom is the variation of the incidence angle h during xy-scanning of the primary beam. 16 The variation in angle induced by the deÑectors is relatively small, but it is magniÐed by the deÑection of the ions in the extraction region. A lower impact energy implies a stronger deÑection and, hence, a larger variation in h. For instance, we measured that when a 1 keV 70¡ O 2b eam was moved over 550 lm in the x-direction (viz.…”

Ultrahigh depth resolution secondary ion mass spectrometry with sub-keV grazing O2+ beams

“…12 Grazing incidence has the addi- tional disadvantage that variation of during ion beam rastering implies variation of the sputter rate, Y , and of the incident ion flux, J, resulting in inhomogeneous sputter erosion. 13 Only if the beam can be operated in the angular range where dY J/dϷ0, could high depth resolution be maintained in a prolonged analysis. In Ref.…”