SIMS Analyses of III-V Semiconductor Quantum-well and Superlattice Heterostructures

Gerardi, C.

doi:10.1002/(sici)1096-9918(199706)25:6<397::aid-sia248>3.0.co;2-9

Cited by 12 publications

(6 citation statements)

References 24 publications

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“…With the TOF SIMS V and the two samples especially designed for this work in GaAs and GaSb material system with different thick aluminum containing layers, we could confirm the results for optimization of the DR found in other papers for GaAs sputtering with oxygen, argon and caesium ions 4, 5. The main focus was the investigation of the less‐established GaSb material system.…”

Section: Discussionsupporting

confidence: 78%

“…Each of the aforementioned ions was employed during the optimization process using energies of 0.5, 1 and 2 keV, and angles of 45, 50 and 55°. The latter two parameters are known to have a major impact on the depth resolution 4–6. The elements of the samples matrix have been directly observed as positively charged single ions using oxygen and argon for sputtering and as caesium compound ions (MCs + ) when using caesium.…”

Section: Methodsmentioning

confidence: 99%

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Optimization and comparison of depth profiling in GaAs and GaSb with TOF‐SIMS

Herrmann¹,

Lehnhardt²,

Strauß³

et al. 2011

Surface & Interface Analysis

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Depth profile analysis of GaAs/AlGaAs and GaSb/AlGaSb heterostructures was performed by SIMS and optimized with respect to the depth resolution. Different sputter ions like caesium, oxygen and argon were used with various sputter angles and ion energies. SEM images were taken from the sputter craters in order to determine the surface roughness which is correlated to the depth resolution. The best results for both material systems were achieved by using argon ions with 0.5 keV at an angle of 55• towards the sample normal.

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Section: Discussionsupporting

confidence: 78%

Section: Methodsmentioning

confidence: 99%

Optimization and comparison of depth profiling in GaAs and GaSb with TOF‐SIMS

Herrmann¹,

Lehnhardt²,

Strauß³

et al. 2011

Surface & Interface Analysis

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“…30 In addition, such a procedure used in combination with optical spectroscopy as it is reported in Ref. The good agreement between the simulated and experimental x-ray curves demonstrates the validity of the procedure developed and employed in this work.…”

Section: Discussionsupporting

confidence: 59%

“…1,21,30 However, all the information regarding the true distributions is contained in the convolved profile and, as mentioned in Sec. 1,21,30 However, all the information regarding the true distributions is contained in the convolved profile and, as mentioned in Sec.…”

Section: B Quantitative Analysismentioning

confidence: 99%

High-resolution depth profiling of InxGa1−xAs/GaAs multiple quantum well structures by combination of secondary ion mass spectrometry and x-ray diffraction techniques

Gerardi

Giannini

Passaseo

et al. 1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inMicrobeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates J. Appl. Phys. 97, 063512 (2005); 10.1063/1.1862769 Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction J. Appl. Phys. 94, 7050 (2003); 10.1063/1.1621738 High-resolution x-ray and transmission electron microscopic analysis of a GaInAsSb/AlGaAsSb multiple quantum well laser structure J. Appl. Phys. 85, 7664 (1999); 10.1063/1.370569Interdiffusion in GaAs (1-x) Sb x /GaAs superlattices studied with high-resolution x-ray diffraction and secondary ion mass spectroscopyIn this work we investigate multiple quantum well semiconductor structures by secondary ion mass spectrometry ͑SIMS͒ and high-resolution x-ray diffraction measurements. The combined use of these techniques turns out to be a very powerful tool for an accurate investigation of both structural and chemical characteristics of complex structures consisting of thin alternating layers. We show that the x-ray data allow us to increase the accuracy of the SIMS analyses providing internal standards, for both depth scale and concentration calibration. This procedure allows us: ͑i͒ to determine accurate quantitative SIMS concentration profiles which lead to the determination of the elemental concentration in the quantum wells, ͑ii͒ the mole fraction and layer thickness of embedded layers, and ͑iii͒ also to investigate eventual segregation and diffusion phenomena occurring at the interfaces. Our procedure is demonstrated on a set of In x Ga 1Ϫx As/GaAs multiple quantum well structures grown by metalorganic chemical vapor phase epitaxy. The experiments, performed by secondary ion mass spectrometry and high-resolution x-ray diffraction measurements, as well as the methodology of the data analyses are discussed in detail. As the main result of our investigation we obtained the precise indium distribution in each of the investigated samples with an accuracy below 5% and the individual barrier and well layer thickness.

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“…Thus, SIMS has been the desired analytics for critical diffusion studies in research on semiconductors . In addition to depth profiling, combining 2D imaging in lateral with sputtering in depth, layered SIMS imaging can be reconstructed in 3D . Detailed 3D‐SIMS analysis of interfaces between phases, such as concentration change and inhomogeneity of diffused species near the interface, can provide more diffusion information between the coating and the substrate from a new perspective.…”

Section: Introductionmentioning

confidence: 99%

3D ToF‐SIMS view of interfacial diffusion between Cr₂AlC coating and zircaloy substrate

Zhang

Dai

Zhang

2019

Surface & Interface Analysis

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A diffused interface between a ceramic coating and a metallic substrate is expected to signify a more solid bonding. In addition to depth profiling, a novel 3D view and imaging approach based on ToF‐SIMS analysis was developed to investigate the diffused species around the interface. The diffusion of Al species in a Cr2AlC ceramic coating and Zircaloy substrate system was investigated in both the as‐deposited and postannealed states. In terms of the 3D view and imaging of CsAl+ after Gaussian convolution, Al species visibly diffused into the substrate after annealing at 800°C for only 5 minutes compared with that in the as‐deposited sample.

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SIMS Analyses of III-V Semiconductor Quantum-well and Superlattice Heterostructures

Cited by 12 publications

References 24 publications

Optimization and comparison of depth profiling in GaAs and GaSb with TOF‐SIMS

Optimization and comparison of depth profiling in GaAs and GaSb with TOF‐SIMS

High-resolution depth profiling of InxGa1−xAs/GaAs multiple quantum well structures by combination of secondary ion mass spectrometry and x-ray diffraction techniques

3D ToF‐SIMS view of interfacial diffusion between Cr₂AlC coating and zircaloy substrate

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SIMS Analyses of III-V Semiconductor Quantum-well and Superlattice Heterostructures

Cited by 12 publications

References 24 publications

Optimization and comparison of depth profiling in GaAs and GaSb with TOF‐SIMS

Optimization and comparison of depth profiling in GaAs and GaSb with TOF‐SIMS

High-resolution depth profiling of InxGa1−xAs/GaAs multiple quantum well structures by combination of secondary ion mass spectrometry and x-ray diffraction techniques

3D ToF‐SIMS view of interfacial diffusion between Cr2AlC coating and zircaloy substrate

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3D ToF‐SIMS view of interfacial diffusion between Cr₂AlC coating and zircaloy substrate