Determination of the band structure of disordered AlGaInP and its influence on visible-laser characteristics

Meney, A.T.; Prins, D W S; Phillips, A.F.; Sly, J.; O’Reilly, Eoin P.; Dunstan, D. J.; Adams, A.R.; Valster, A.

doi:10.1109/2944.401259

Cited by 63 publications

(30 citation statements)

References 39 publications

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“…7b shows the calculated variations in the band offsets as a function of the Al composition z in the barrier material. The solid symbols in this figure give the bandoffset results found in previous pressure-PL measurements on In 0X62 Ga 0X38 Pa Al z Ga 1Àz ) 0X5 In 0X5 P QW specimens with z 0, 0.3, and 0.7 [23]. Note that the 62% In fraction of the samples studied in [23] differs little from the system calculated here, and hence a meaningful comparison can be made.…”

Section: Resultsmentioning

confidence: 78%

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Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments

Ritter

Weinstein

Viturro

et al. 1999

phys. stat. sol. (b)

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Section: Resultsmentioning

confidence: 78%

“…In this case, the G±X crossing is predicted to take place near the Al composition z 0X63. For comparison, estimates of the crossover at z % 0X6 [23] and z % 0X5 [26] have been reported.…”

Section: Resultsmentioning

confidence: 98%

Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments

Ritter

Weinstein

Viturro

et al. 1999

phys. stat. sol. (b)

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“…But there is also one new feature which has not been included in the previous model because of its negligible impact on properties of the above VCSELs and which has happened to be extremely important in the GaInP/AlGaInP one. In the AlGaInP compounds, the crossover of the direct and indirect band gaps occurs at 300 K for the (Al 0.58 Ga 0.42 ) 0.5 In 0.5 P material [11], which limits shorter-wavelength operation to about 555-570 nm and band-gap energies available for barrier and cladding materials [10]. Even for somewhat longer wavelengths, the higher active-region temperatures may lead to the considerable electron leakage (Fig.…”

Section: The Modelmentioning

confidence: 99%

Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures

Piskorski

Sarzała

Nakwaski

2008

Opto-Electronics Review

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The possibility of application of the 650-nm oxide-confined GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers (VCSELs) at elevated temperatures as sources of the carrier 650-nm wave in the fibre optical communication using POFs has been investigated with the aid of the comprehensive self-consistent model. An increase in the VCSEL threshold current at higher temperatures has been found to be mostly associated with both the carrier leakage from the valley of the Ga0.43In0.57P quantum-well material to the X-valley of the (Al0.67Ga0.33)0.52In0.48P barriers and the band-to-band absorption within the Ga0.52In0.48P layer of the band-gap comparable with the energy of emitted radiation. Nevertheless, the AlGaInP VCSELs exhibit encouraging thermal behaviour with the characteristic temperature T0 equal to as much as 134 K for the active-region temperatures up to 357 K. For the 5-μm devices, the maximal achievable output has been determined to decrease from a quite high value of 1.0 mW for 293 K to 0.6 mW for 320 K and to still high 0.33 mW for 340 K. However, an efficient operation of the above VCSEL at elevated temperatures requires still some structure modifications leading to a reduction of both the above effects, the electron leakage from the valley and the band-to-band absorption within GaInP layers.

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“…Meanwhile, the orange and yellow range has some important applications in medicine [1,2] and in optical communication using plastic fibers. So far the yellow range has been achieved by frequency doubling of infrared laser diodes [3][4][5] or by frequency doubling of diodepumped solid state lasers [6].High pressure increases the direct bandgap in III-V semiconductors and has been extensively used to characterize laser diodes [7][8][9][10][11] and to tune their emission wavelength [12][13][14]. For red lasers the pressure tuning can only be performed at low temperature in order to keep leakage currents low.…”

mentioning

confidence: 99%

“…High pressure increases the direct bandgap in III-V semiconductors and has been extensively used to characterize laser diodes [7][8][9][10][11] and to tune their emission wavelength [12][13][14]. For red lasers the pressure tuning can only be performed at low temperature in order to keep leakage currents low.…”

mentioning

confidence: 99%

Pressure and temperature tuning of InGaP/AlGaInP laser diodes from red to yellow

Bercha

Bohdan

Trzeciakowski³

et al. 2009

Physica Status Solidi (b)

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1 Introduction InGaP/AlGaInP laser diodes are commercially available in the 635-690 nm range. Shorter wavelength operation is hampered by increased leakage currents. Meanwhile, the orange and yellow range has some important applications in medicine [1,2] and in optical communication using plastic fibers. So far the yellow range has been achieved by frequency doubling of infrared laser diodes [3][4][5] or by frequency doubling of diodepumped solid state lasers [6].High pressure increases the direct bandgap in III-V semiconductors and has been extensively used to characterize laser diodes [7][8][9][10][11] and to tune their emission wavelength [12][13][14]. For red lasers the pressure tuning can only be performed at low temperature in order to keep leakage currents low. In the present paper we describe L -I -V and spectral measurements of two InGaP/AlGaInP laser diodes in a wide range of pressures (up to 20 kbar) and temperatures (from 300 K down to 80 K). The first sample shows characteristic anomalies in L-I-V at low temperature and high pressure, attributed to impact ionization of holes in pcladdings [15]. The second sample does not show such anomalies and is tuned in the 70 nm range (from 645 nm to 575 nm) with low threshold current and high emission power.

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Determination of the band structure of disordered AlGaInP and its influence on visible-laser characteristics

Cited by 63 publications

References 39 publications

Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments

Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments

Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures

Pressure and temperature tuning of InGaP/AlGaInP laser diodes from red to yellow

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