Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments

Ritter, T. M.; Weinstein, B. A.; Viturro, R. E.; Bour, D. P.

doi:10.1002/(sici)1521-3951(199902)211:2<869::aid-pssb869>3.0.co;2-n

Cited by 8 publications

(4 citation statements)

References 13 publications

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“…106 The hydrostatic deformation potentials were calculated by Van de Walle, 129 although a slight correction was found to be necessary when energy level alignments in a GaInP/ AlGaInP laser structure were fit. 206 We select bϭϪ1.5 eV in accordance with the calculations of O'Reilly 130 and Krijn, 101 although higher values have been computed by Blacha et al 122 No values for the shear deformation potential d appear to have been reported. In the absence of other information, we recommend the value of dϭϪ4.6 eV derived for GaP ͑see previous subsection͒.…”

Section: E Alpmentioning

confidence: 93%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,670

289

3,822

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, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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Section: E Alpmentioning

confidence: 93%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,670

289

3,822

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“…Absorption requires values of effective masses and parabolic band structure to measure the band offset [3]. PL and PLE are often subject to interference from competing optical transitions due to strain splitting, phonon replicas, and impurities [4]. Thermionic emission requires currentvoltage (I-V) measurements at different temperatures to extract the activation energies over barriers, and it does not work at low temperatures [5].…”

mentioning

confidence: 99%

Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy

Narayanamurti

Lü

et al. 2009

Applied Physics Letters

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Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any prerequisite material parameter. Measurements are performed on lattice-matched GaAs/AlxGa1−xAs and GaAs/(AlxGa1−x)0.51In0.49P single-barrier heterostructures. The bandgaps of AlGaAs and AlGaInP are measured with a resolution of several meV at 4.2 K. For the GaAs/AlGaAs interface, the measured Γ band offset ratio is 60.4:39.6 (±2%). For the GaAs/AlGaInP interface, this ratio varies with the Al mole fraction and is distributed more in the valence band. A non-monotonic Al composition dependence of the conduction band offset at the GaAs/AlGaInP interface is observed in the indirect-gap regime. 73.23.Ad, 73.40.Kp Among the most important properties of semiconductor materials are their energy gaps and the relative alignment of the energy band edges at the heterojunction (HJ) interface between two dissimilar semiconductors, i.e. the way in which the total bandgap difference distributes between the conduction band discontinuity ∆E C and the valence band discontinuity ∆E V . An accurate knowledge of such properties is crucial for the design of heterostructure devices widely used in high-speed and power electronics, photonics, and energy conversion.Numerous efforts have been devoted to measure the bandgap and band offsets. Bandgaps are measured mostly with optical spectroscopies such as absorption, photoluminescence (PL), photoluminescence excitation (PLE), and ellipsometry [1]. Band offset measurements can be divided into three categories: electrical techniques such as thermionic emission and capacitance-voltage (C-V); optical techniques such as absorption, PL, and PLE; and photoelectron techniques such as x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) [2]. However, each of these methods has certain limitations or weakness. Absorption requires values of effective masses and parabolic band structure to measure the band offset [3]. PL and PLE are often subject to interference from competing optical transitions due to strain splitting, phonon replicas, and impurities [4]. Thermionic emission requires currentvoltage (I-V) measurements at different temperatures to extract the activation energies over barriers, and it does not work at low temperatures [5]. In C-V measurements, detailed device simulations are needed to consider the effect of deep levels in the barrier layer [6]. * Electronic address: weiyi@seas.harvard.edu XPS and UPS are limited to measuring the valence band offests [2]. With a three-terminal device configuration, Ballistic Electron Emission Microscopy (BEEM) and Spectroscopy (BEES) utilize ballistic injection of electrons/holes to probe the band offsets of HJs buried beneath a metal-semiconductor (m-s) interface [7]. To measure the genuine barrier heights, a delta-doping is needed to reach a flat-band condition in the heterostructure, whic...

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“…The top plots of Fig. 1(b) show the spectra of emission in the normal direction (θ 0°) from the MQW substrate without a DBR, in which emission of the heavy hole (HH) transition has a peak at λ H 668 nm, and emission of the light hole (LH) transition has a peak at λ L 660 nm [40,41]. The bottom plots in Fig.…”

Section: Introductionmentioning

confidence: 99%

Polarized spontaneous emission from an emitter in controlled nodal vacuum fluctuations near a single high reflector

Iwase¹

2014

J. Opt. Soc. Am. B

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Polarization-dependent spontaneous emission (SE) from multiple quantum wells (MQWs) sandwiched between a high-reflectivity distributed Bragg reflector (DBR) and a low-reflectivity surface of about 30% reflectance was investigated. In photoluminescence spectra, a split of the p-and s-polarized emission peaks was observed at the DBR band edges, while emission was completely suppressed in its bandgap. Theoretical analysis of the SE rate, based on quantum electrodynamics, explains well the experimental observations; that is, SE enhancement ratios of polarized light can be varied drastically by shifting the position of the low-reflectivity surface that modifies the nodal vacuum fluctuations in front of the high reflector.The studied structure is shown in Fig. 1(a), where the MQW is located in an Al 0.5 Ga 0.5 As slab with an average index of

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Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments

Cited by 8 publications

References 13 publications

Band parameters for III–V compound semiconductors and their alloys

Band parameters for III–V compound semiconductors and their alloys

Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy

Polarized spontaneous emission from an emitter in controlled nodal vacuum fluctuations near a single high reflector

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