Determination of the carrier concentration in CdSe crystals from the effective infrared absorption coefficient measured by means of the photothermal infrared radiometry

Pawlak, M.

doi:10.1007/s00339-014-8860-y

Cited by 7 publications

(4 citation statements)

References 10 publications

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“…Furthermore, the carrier contribution can be also considered negligible since we are dealing with a semiconductor of small direct band gap (0.91 eV) [19][20][21]. In such a situation, the recombination lifetime is very short (~10 s ns if the analysis is performed by the use of ThWs determined in [18]) and the carrier contribution can be neglected in low and intermediate frequencies range [20,21]. Additionally, it was demonstrated that, the conductivity of CuFeInTe 3 material presents metallic behavior [19].…”

Section: Photodeflection Signalmentioning

confidence: 99%

“…The temperature rise of the sample caused by illumination by the pump beam is a fraction of Kelvin, thus, both the heat convection and radiation can be considered negligible. Furthermore, the carrier contribution can be also considered negligible since we are dealing with a semiconductor of small direct band gap (0.91 eV) [19][20][21]. In such a situation, the recombination lifetime is very short (~10 s ns if the analysis is performed by the use of ThWs determined in [18]) and the carrier contribution can be neglected in low and intermediate frequencies range [20,21].…”

Section: Photodeflection Signalmentioning

confidence: 99%

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Optimized frequency dependent photothermal beam deflection spectroscopy

Korte¹,

Cabrera²,

Toro³

et al. 2016

Laser Phys. Lett.

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In the letter the optimization of the experimental setup for photothermal beam deflection spectroscopy is performed by analyzing the influence of its geometrical parameters (detector and sample position, probe beam radius and its waist position etc) on the detected signal. Furthermore, the effects of the fluid's thermo-optical properties, for optimized geometrical configuration, on the measurement sensitivity and uncertainty determination of sample thermal properties is also studied. The examined sample is a recently developed CuFeInTe3 material. It is seen from the obtained results, that it is a complex problem to choose the proper geometrical configuration as well as sensing fluid to enhance the sensitivity of the method. A signal enhancement is observed at low modulation frequencies by placing the sample in acetonitrile (ACN), while at high modulation frequencies the sensitivity is higher for measurements made in air. For both, detection in air and acetonitrile the determination of CuFeInTe3 thermal properties is performed. The determined values of thermal diffusivity and thermal conductivity are (0.048 ± 0.002) × 10 −4 m 2 s −1 and 4.6 ± 0.2 W m −1 K −1 and (0.056 ± 0.005) × 10 −4 m 2 s −1 and 4.8 ± 0.4 W m −1 K −1 for ACN and air, respectively. It is seen, that the determined values agree well within the range of their measurement uncertainties for both cases, although the measurement uncertainty is two times lower for the measurements in ACN providing more accurate results. The analysis is performed by the use of recently developed theoretical description based on the complex geometrical optics. It is also shown, how the presented work fits into the current status of photothermal beam deflection spectroscopy.

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Section: Photodeflection Signalmentioning

confidence: 99%

Section: Photodeflection Signalmentioning

confidence: 99%

Optimized frequency dependent photothermal beam deflection spectroscopy

Korte¹,

Cabrera²,

Toro³

et al. 2016

Laser Phys. Lett.

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“…Photothermal methods are noncontact and very suitable methods for thermal characterization of semiconductors [11][12][13]. Thus, the thermal diffusivity was determined by a photothermal method with mirage detection.…”

Section: Determination Of Thermal Diffusivitymentioning

confidence: 99%

Investigations of Thermal, Optical, and Electric Properties as a Function of Composition for $$\hbox {ZnS}_{x}\hbox {Se}_{1-x}$$ ZnS x Se 1 - x Crystals

et al. 2015

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ZnS x Se 1−x single crystals with different S contents were examined. The crystals were grown by the modified Bridgman method. Thermal, optical, and electrical measurements for a solid solution of ZnS x Se 1−x crystals are presented and analyzed to determine the influence of composition on the thermal diffusivity, the electrical resistivity, the relative permittivity, and the energy gap. The thermal measurement was based on the thermal wave method with detection using the mirage effect. For interpretation of the experimental data, a thermal model of a layered system was adopted. The results showed that the thermal diffusivity of samples decreases with an increase of the S content x. The electrical resistivity of investigated samples was measured by the constant voltage method. The relative permittivity was determined by dielectric spectroscopy and decreased with increasing sulfur content in the ZnSe. Further, the optical bandgap of ZnS x Se 1−x was determined from photoluminescence spectra. Possible correlations between the thermal diffusivity, the optical bandgap, and electrical properties were studied. The obtained results showed a clear dependence of those parameters on the S concentration in the sample.

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“…Experimental methods which provide simultaneous information about both thermal and infrared properties are thus very attractive. Among them, the modulated photothermal infrared radiometry (PTR) is a noncontact method for measuring thermal, infrared and electronic transport properties of semiconductor species [2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Quantitative thermal wave phase imaging of an IR semi-transparent GaAs wafer using IR lock-in thermography

Pawlak

Streza

Morari

et al. 2016

Meas. Sci. Technol.

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In this paper, the simultaneous measurement of out-of-plane thermal diffusivity and effective infrared absorption coefficient of an IR semi-transparent GaAs wafer using infrared lock-in thermography technique (LIT) is presented. The method relies on analysis of the generated LIT phase images recorded at different modulation frequencies, using the thermal wave model in the transmission configuration. The out-of-plane thermal diffusivity and effective infrared absorption coefficient are estimated from the best fit of the theoretical model to the experimental data. The obtained values are in good agreement with those obtained by supplementary measurement using the modulated photothermal infrared radiometry technique (PTR) in the reflection mode, and also with data reported in the literature. In addition, simple modification of the LIT experiment set up allows one to determinate the in-plane thermal diffusivity of n-GaAs wafer. It was found that in-plane and out-of-plane thermal diffusivities of the GaAs wafer are very close, as expected, within the limit of measurement errors. The results show that the LIT technique in transmission configuration can provide spatial information about both the (effective) infrared absorption coefficient and thermal diffusivity of semiconductor crystals.

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Determination of the carrier concentration in CdSe crystals from the effective infrared absorption coefficient measured by means of the photothermal infrared radiometry

Cited by 7 publications

References 10 publications

Optimized frequency dependent photothermal beam deflection spectroscopy

Optimized frequency dependent photothermal beam deflection spectroscopy

Investigations of Thermal, Optical, and Electric Properties as a Function of Composition for $$\hbox {ZnS}_{x}\hbox {Se}_{1-x}$$ ZnS x Se 1 - x Crystals

Quantitative thermal wave phase imaging of an IR semi-transparent GaAs wafer using IR lock-in thermography

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