Determination of the GaInP/AlGaInP band offset

Abstract

Low-temperature photoluminescence excitation spectra of disordered Ga0.5In0.5P/Al0.3Ga0.2In0.5P quantum wells lattice matched to (311)B GaAs substrates have been measured for the first time. Transition energies calculated with a k̄⋅p̄ approach agree with experiment within 3 MeV, over the entire range of quantum well thicknesses (Lz=11–109 Å). A conduction-band discontinuity of 0.65±0.05 is derived.

Photoluminescence of compressively strained AlGaInP/GaInP quantum well structures grown by MOCVD

“…The deeper the well the smaller is the probability of carrier escape from well due to thermal excitation. Assuming a conduction band discontinuity of 65% of the band gap difference [14][15][16] between the barrier and the well is 258 and 325 meV for samples A and C, respectively, the potential well depth can be estimated to be about 156/87 and 195/106 meV for electron/hole in samples A and C, respectively, taking into account the quantum confinement effect. The shallower the well the more likely the carriers escape the well and hence more carriers will be lost through this path.…”

Negative activation energy and dielectric signatures of excitons and excitonic Mott transitions in quantum confined laser structures

“…This value closely matches with the binding energy of the weakly confined excitons in these MQW laser diodes. 43,44 Therefore, we connect this occurrence of an effective "negative activation energy" to the presence of a stable, steady state population of "excitonic bound states." We further highlight that contribution of defects and excitons in fdC/df measurements can simply be differentiated by looking at Figs.…”

Temperature dependence of photoluminescence intensity from AlGaInP/GaInP multi-quantum well laser structures

“…c r ðzÞ denotes the wavefunction, U r is the subband energy in the quantum well, and m à r is the corresponding carrier effective mass in the z direction. A conduction band offset of 0.65 was used in the calculation [13]. The values for effective masses were determined by interpolations of the binary parameters by Vegard's Law.…”