Low-temperature photoluminescence excitation spectra of disordered Ga0.5In0.5P/Al0.3Ga0.2In0.5P quantum wells lattice matched to (311)B GaAs substrates have been measured for the first time. Transition energies calculated with a k̄⋅p̄ approach agree with experiment within 3 MeV, over the entire range of quantum well thicknesses (Lz=11–109 Å). A conduction-band discontinuity of 0.65±0.05 is derived.
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