2017
DOI: 10.1080/08957959.2016.1269900
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Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction

Abstract: The high pressure behavior of gallium phosphide, GaP, has been examined using the synchrotron X-ray diffraction technique in a diamond anvil cell up to 27 GPa and 900 K. The transition from a semiconducting to a metallic phase was observed. This transition occurred at 22.2 GPa and room temperature, and a negative dependence of temperature of this transition was found. The transition boundary was determined to be P (GPa) = 22.6 − 0.0014 × T (K).

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Cited by 12 publications
(9 citation statements)
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“…The samples were probed using an angle-dispersive X-ray powder diffraction technique at the synchrotron beam lines AR-NE1A at the Photon Factory or BL10XU at SPring-8. Experimental assemblies for synchrotron X-ray measurements have been described elsewhere 24,25 . A monochromatic incident X-ray beam was used in both synchrotron beam lines.…”
Section: Methodsmentioning
confidence: 99%
“…The samples were probed using an angle-dispersive X-ray powder diffraction technique at the synchrotron beam lines AR-NE1A at the Photon Factory or BL10XU at SPring-8. Experimental assemblies for synchrotron X-ray measurements have been described elsewhere 24,25 . A monochromatic incident X-ray beam was used in both synchrotron beam lines.…”
Section: Methodsmentioning
confidence: 99%
“…The octahedral assembly was compressed to a pressure of 16 and 20 GPa and, at pressure, heated to a chosen temperature in the range of 1800-2000 °C and held for 30 min. Pressure was calibrated at room temperature using the semiconductor to metal transition of GaP at 22 GPa 33 . Sample temperatures were estimated using power-temperature relations calibrated in a separate run using a W5%Re/W26%Re thermocouple (C-type).…”
Section: Methodsmentioning
confidence: 99%
“…The onset of oS 24 GaP instability upon decompression occurs within its calculated stability field. Furthermore, the SC16 phase was not observed experimentally, even upon heating . Inconsistencies among different experiments and with calculations are very common in high-pressure semiconductor studies. While some differences between predictions and experiments ought to be expected, the combination of rich phase diagrams with narrow stability ranges for phases such as SC16, experimental limitations (chiefly nonhydrostatic conditions and low resolution, here dramatically improved), and most importantly the kinetic hindrance of the transition between all these phases, can explain seemingly inconsistent observations.…”
Section: Resultsmentioning
confidence: 99%
“…Diffraction analysis suggests that oS 8 GaP is a long-range, site-disordered structure, , whereas extended X-ray absorption fine structure (EXAFS) data recorded at the gallium K -edge ( E = 10.367 keV) show that Cmcm GaP is a short-range ordered structure with 6 Ga–P bonds and no Ga–Ga bonds at 39 GPa . A recent study suggests a nearly isobaric boundary at ∼22 GPa between ZB and oS 8 phases up to ∼800 K . In spite of the wealth of experimental and theoretical investigations of the ZB → Cmcm transition, it remains unclear if site-disordered arrangements exist in the Cmcm GaP phase, which is of crucial importance to understand the nature of phase transitions in this class of octet semiconductors.…”
Section: Introductionmentioning
confidence: 99%