Determination of the Physical Properties of Point Defects in Silicon from Back‐Side Oxidation Experiments

Abstract

The physical parameters of point defects in silicon at 1100~ are obtained by the simulation of the back-side oxidation (BSO) experiments of Mizuo and Higuchi. The simulation yielded the equilibrium concentrations and diffusion coefficients of interstitials and vacancies at 1100~ Furthermore it is seen from this analysis that the nitride layers used in the BSO experiments do not absorb any point defects. The point defects are found to penetrate the silicon bulk without loss by interaction with imperfections. The oversaturation of interstitiais and undersaturation of vacancies are obtained by fitting the OED and ORD experiments of Mizuo and Higuehi. From the consideration of diffusion under Si3N4 layers in comparison to the diffusion under oxide layers a relation between the equilibrium concentrations of vacancies and interstitials has been obtained. These have been used in the simulations together with the results from gold diffusion experiments concerning the contributions to self-diffusion originating from interstitials and vacancies. The resulting set of physical parameters obtained from 1100~ (c~ q = 1.3 -1016 cm -3, c~ q = 9.1 -1015 cm -3, DI = 6.0 9 10 -0 cm 2 s -1, Dv = 5.3 -10 9 cm 2 s-l) is uniquely determined.