30th European Solid-State Device Research Conference 2000
DOI: 10.1109/essderc.2000.194820
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Determination of the Recombination Lifetime in the Space Charge Region of MOS Field-Induced PN Junctions

Abstract: We report a fast and accurate method to obtain the recombination lifetime from CV measurements on MOS structures in the context of a regular CV testing. The simultaneous measurement of the gate current and the high frequency gate capacitance in the non-equilibrium nonsteady state in response to a linear gate voltage ramp, started in inversion equilibrium towards accumulation, enables the self-consistent determination of the forward current-voltage characteristic of the field-induced pn junction. The applicatio… Show more

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