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We report a fast and accurate method to obtain the recombination lifetime from CV measurements on MOS structures in the context of a regular CV testing. The simultaneous measurement of the gate current and the high frequency gate capacitance in the non-equilibrium nonsteady state in response to a linear gate voltage ramp, started in inversion equilibrium towards accumulation, enables the self-consistent determination of the forward current-voltage characteristic of the field-induced pn junction. The application of the model for the forward current-voltage characteristic of regular pn junctions at low minority carrier injection permits the determination of both the recombination lifetime and the energy distance of the defect centre from the midband level.

Gate oxide integrity (GOI) testing is a valuable tool for the characterization, development and optimization of tailor-made silicon (Si) substrates for the integrated circuits industry. Different Si substrates with various numbers of grown-in defects have been evaluated using charge-to-breakdown measurements. Yield and defect density analyses are studied for oxide thicknesses in the range from 40 nm down to 5 nm. The sensitivity and impact of grown-in defects, here predominantly crystal-originated particles (COPs), for different material groups on gate oxide reliability are shown in detail. In addition, results are presented on gate oxide degradation due to intentional metallic (Ni, Cu, Fe) contamination of various wafer types.