Determination of the thickness and optical constants of nanofilms produced by the thermal oxidation of InP with V2O5, V2O5 + PbO, and NiO + PbO chemical stimulator layers grown by magnetron sputtering

Abstract

The thickness and optical constants of films grown through the thermal oxidation of V 2 O 5 /InP, (NiO + PbO)/InP, and (V 2 O 5 + PbO)/InP structures produced by magnetron sputtering have been deter mined by spectral ellipsometry. The results demonstrate that the structures have sharp interfaces and their optical constants in the long wavelength part of the spectrum are well described by the Cauchy model with a normal dispersion law, which allows one to determine the thickness of such nanofilms with high accuracy using high speed ellipsometric characterization with a single wavelength laser ellipsometer.

НЕЛИНЕЙНЫЕ ЭФФЕКТЫ СОВМЕСТНОГО ВОЗДЕЙСТВИЯ ОКСИДОВ р- И d-ЭЛЕМЕНТОВ ПРИ СОЗДАНИИ ТОНКИХ ПЛЕНОК НА ПОВЕРХНОСТИ GaAs И InP ОБЗОР

“…В работах [41][42][43][44][45] исследован процесс термооксидирования гетероструктур (NiO + PbO)/InP и (V 2 O 5 + PbO)/InP). В первом случае композиция хемостимуляторов представляет собой оксиды, действующие на процесс термооксидрования InP по транзитному механизму, во втором же один из оксидов (V 2 O 5 ) оказывает влияние по каталитическому механизму [46].…”

Spectral ellipsometry study of thin films grown on GaAs by chemically stimulated thermal oxidation

“…The fact that the interference oscillations are abruptly terminated at wavelengths under 440 nm suggests that there is either a considerable absorption in the short wavelength region or a considerable contribution from Rayleigh scattering by microinhomogeneities, which is proportional to (1/λ) 4 . In the long wavelength region, qualitative agreement between the measured and calculated ellip sometric spectra was only reached in a two layer model (Fig.…”

“…One way to solve this problem is ellipsometry, in particular, spectral ellipsometry. As shown earlier [3,4], it can be used to assess the thickness and optical properties of thin films on InP surfaces. The purpose of this work was to determine the thickness and optical characteristics of nanofilms on the surface of GaAs by spectral ellipsometry.…”