Determination of the transport lifetime limiting scattering rate in InSb/Al x In 1−x Sb quantum wells using optical surface microscopy

Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices

“…Figure 2(f) shows the field-effect mobilities extracted from the gate-transfer characteristic measurements of the device at different temperatures. It is seen that the mobility tends to saturate at low temperatures (below ∼77 K), in good agreement with the results obtained from InSb QWs [15], but decreases exponentially with increasing temperature at high temperatures (above ∼100 K). In the considered temperature range, the temperature-dependent mobility μ(T) in the InSb nanosheet can be approximately expressed as…”

“…Here, term / 1 imp m describes contributions from all scattering events due to imperfections, such as impurities, defects, charge traps, surface/interface roughness etc., in the nanosheet, its surface native oxides and the dielectrics [15,50]. This term is, to the lowest order approximation, temperature independent.…”

“…To date, epitaxially grown InSb nanowires have been extensively investigated and have been employed as emerging platforms for realizing field-effect transistors (FETs) [1,2], quantum dot devices [5][6][7], and semiconductor-superconductor hybrid quantum devices [10][11][12]. Recently, high-quality twodimensional (2D) InSb quantum structures, such as InSb quantum wells (QWs) [13][14][15][16][17][18][19][20][21] and free-standing nanosheets [22][23][24][25], have been achieved via epitaxial growth, opening up new possibilities for fabricating planar, integrated, complex quantum devices. Due to advances in material engineering, these heterostructured InSb QWs have been demonstrated to exhibit high electron mobilities and large mean free paths, and have been successfully employed to make good quantum point contacts (QPCs) in which well-defined conductance quantization has been observed [14,17,21].…”