Infrared photoreflectance of InSb-based two-dimensional nanostructures

Firsov, D. D.; Комков, О. С.; Соловьев, В. А.; Семенов, А. Н.; Иванов, С. В.

doi:10.1364/josab.36.000910

Cited by 8 publications

(5 citation statements)

References 40 publications

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“…When solving this problem, one can prevent false solutions in the multiband model by the -representation method since the considered region of -space can be limited based on the estimated width of the wave functions compared to the size of the Brillouin zone. The primary method to solve the Schrödinger equation involved a periodical continuation of a single quantum well [35,51,52] . The periodicity condition leads to the fact that the wave vector of an electron in a crystal becomes discrete, and the Schrödinger equation itself turns into a system of algebraic equations…”

Section: Theoretical Study Of Smp Sls: the Kane Modelmentioning

confidence: 99%

An advanced theoretical approach to study super-multiperiod superlattices: theory vs experiments

Dashkov,

Khakhulin,

Shapran

et al. 2024

J. Semicond.

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A new theoretical method to study super-multiperiod superlattices has been developed. The method combines the precision of the 8-band kp-method with the flexibility of the shooting method and the Monte Carlo approach. This method was applied to examine the finest quality samples of super-multiperiod Al0.3Ga0.7As/GaAs superlattices grown by molecular beam epitaxy. The express photoreflectance spectroscopy method was utilized to validate the proposed theoretical method. For the first time, the accurate theoretical analysis of the energy band diagram of super-multiperiod superlattices with experimental verification has been conducted. The proposed approach highly accurately determines transition peak positions and enables the calculation of the energy band diagram, transition energies, relaxation rates, and gain estimation. It has achieved a remarkably low 5% error compared to the commonly used method, which typically results in a 25% error, and allowed to recover the superlattice parameters. The retrieved intrinsic parameters of the samples aligned with XRD data and growth parameters. The proposed method also accurately predicted the escape of the second energy level for quantum well thicknesses less than 5 nm, as was observed in photoreflectance experiments. The new designs of THz light-emitting devices operating at room temperature were suggested by the developed method.

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Section: Theoretical Study Of Smp Sls: the Kane Modelmentioning

confidence: 99%

An advanced theoretical approach to study super-multiperiod superlattices: theory vs experiments

Dashkov,

Khakhulin,

Shapran

et al. 2024

J. Semicond.

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show abstract

“…24 It has also enabled detailed study of the energy spectra of various quantum well structures based on narrow-gap semiconductor materials. [25][26][27] Within the framework of the current work, we intend to combine the method of modulation FT-IR spectroscopy with polarization-sensitive techniques to provide the possibility of measuring the RA spectra. Special emphasis is placed on the signal normalization required to obtain the correct shape of the polarization-modulated FT-IR spectra.…”

Section: Introductionmentioning

confidence: 99%

“…24 It has also enabled detailed study of the energy spectra of various quantum well structures based on narrow-gap semiconductor materials. 25–27…”

Section: Introductionmentioning

confidence: 99%

Fourier Transform Infrared Reflection Anisotropy Spectroscopy of Semiconductor Crystals and Structures: Development and Application in the Mid-Infrared

Firsov

Комков

2023

Appl Spectrosc

Self Cite

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A new method of reflection anisotropy spectroscopy (RAS) with increased mid-IR efficiency owing to the use of a Fourier-transform infrared (FT-IR) spectrometer has been developed. An optical setup was implemented using a photoelastic modulator (PEM) to modulate the direction of linear polarization of the probe beam originating from the Michelson interferometer. An original measurement algorithm was proposed to eliminate the influence of spectral inhomogeneity of the PEM efficiency on the obtained spectra via appropriate calibration. It was shown that to preserve the sign of the RAS signal, it is necessary to use a specialized procedure for phase correction of the interferogram registered by the FT-IR spectrometer. In the visible range, good agreement was confirmed between the obtained reflection anisotropy (RA) spectra of a semiconductor crystal and the results of independent measurements using a conventional diffraction grating spectrometer-based setup. The RA spectrum of a III-V semiconductor heterostructure in the mid-infrared range (λ up to 8 µm) is demonstrated. Application of the developed FT-IR RAS method to layered black phosphorus has enabled characterization of anisotropic interband transitions in a graphene-like semiconductor crystal.

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“…This method was first used to study InSb insertions in a bulk InAs layer. 26) The energy gap between the signals from the InSb insertion and the InAs matrix defined a hole localization energy which was found to increase for thicker InSb insertions. 27) A typical PR spectrum for sample #1 is shown at the top of Fig.…”

mentioning

confidence: 99%

Peculiarities of the energy spectrum of InSb/InAs/InGaAs/InAlAs/GaAs nanoheterostructures revealed by room temperature photomodulation FTIR spectroscopy

Комков

Firsov

Andreev

et al. 2019

Jpn. J. Appl. Phys.

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Fourier-transform infrared photoreflectance was used to optimize design and growth temperature of complex III-V nanoheterostructures proposed for efficient mid-IR emitters. They comprised an InAs/InGaAs quantum well (QW) with InSb sub-monolayer insertions and were grown by molecular beam epitaxy on GaAs substrates via a convex-graded InAlAs metamorphic buffer layer. The room temperature photoreflectance spectra supported by the full 8 × 8 Kane model calculations showed that the triple InSb insertions enhance the probability of the main optical transitions in the QW, while lowering the growth temperature results in a red shift of the transitions and further increase in their probability.

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Infrared photoreflectance of InSb-based two-dimensional nanostructures

Cited by 8 publications

References 40 publications

An advanced theoretical approach to study super-multiperiod superlattices: theory vs experiments

An advanced theoretical approach to study super-multiperiod superlattices: theory vs experiments

Fourier Transform Infrared Reflection Anisotropy Spectroscopy of Semiconductor Crystals and Structures: Development and Application in the Mid-Infrared

Peculiarities of the energy spectrum of InSb/InAs/InGaAs/InAlAs/GaAs nanoheterostructures revealed by room temperature photomodulation FTIR spectroscopy

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