Determination of the valence band offset of MOVPE-grown<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">In</mml:mi><mml:mn>0.48</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mn>0.52</mml:mn></mml:msub><mml:mi mathvariant="normal">P</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">As</mml:mi></mml:mrow></mml:math>multiple quantum wells by admittance spectroscopy

Ghezzi, Carlo; Magnanini, R.; Parisini, A.; Tarricone, Luciano; Gombia, E.; Longo, M.

doi:10.1103/physrevb.77.125317

Cited by 21 publications

(17 citation statements)

References 45 publications

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“…Offering the possibility of designing confinements for electrons/holes and photons, the band offsets are determinative for the characteristics of semiconductor heterojunction based devices. Given its significance, it was not surprising that this parameter was studied by numerous methods, [2][3][4] still without overall agreement. With respect to heterojunctions where experimental data are unavailable, the common practice is to use the model-solid theory.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent internal photoemission probe for band parameters

Lao

Perera

2012

Phys. Rev. B

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The temperature-dependent characteristic of band offsets at the heterojunction interface was studied by an internal photoemission (IPE) method. In contrast to the traditional Fowler method independent of the temperature (T), this method takes into account carrier thermalization and carrier/dopant-induced band-renormalization and band-tailing effects, and thus measures the band-offset parameter at different temperatures. Despite intensive studies in the past few decades, the T dependence of this key band parameter is still not well understood. Reexamining a p-type doped GaAs emitter/undoped Al x Ga 1−x As barrier heterojunction system disclosed its previously ignored T dependency in the valence-band offset, with a variation up to ∼−10 −4 eV/K in order to accommodate the difference in the T-dependent band gaps between GaAs and AlGaAs. Through determining the Fermi energy level (E f), IPE is able to distinguish the impurity (IB) and valence bands (VB) of extrinsic semiconductors. One important example is to determine E f of dilute magnetic semiconductors such as GaMnAs, and to understand whether it is in the IB or VB.

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Section: Introductionmentioning

confidence: 99%

Temperature-dependent internal photoemission probe for band parameters

Lao

Perera

2012

Phys. Rev. B

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“…The interferences generated by quantum reflections at the abrupt potential variations around the barriers are clearly visible. Due to the high VB offset (ΔE v ) at the GaAs/In 0.49 Ga 0.51 P heterojunction (ΔE v = 356 meV versus ΔE c = 119 meV for the CB [13]), these reflections are particularly strong in the VB at the left contact. It can be noticed that these interferences are also at the origin of the peaked character of the current spectrum (see Fig.…”

Section: Theoretical Approachmentioning

confidence: 99%

Reflective Barrier Optimization in Ultrathin Single-Junction GaAs Solar Cell

Cavassilas

Gelly

Michelini

et al. 2015

IEEE J. Photovoltaics

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This paper proposes a theoretical analysis of electronic transport in ultrathin (220 nm) single-junction GaAs solar cell. Using an in-house electronic quantum transport model, we shed light on two detrimental phenomena, namely the "backdiffusion" and the "contact-to-contact diffusion." While the back-diffusion degrades both the short-circuit current and the fill factor, the contact-to-contact diffusion reduces the open-circuit voltage. The so-called window and back-surface-field barriers used to reflect minority carriers away from contacts reduce these two detrimental phenomena. In a second part, we then show a synthesis of performance optimization of window/GaAs/backsurface-field heterojunctions varying thicknesses, materials, and material composition profiles. Our results conclude that the Al 0 .4 Ga 0 .6 As(10 nm)/GaAs/In 0 .49 Ga 0 .51 P(10 nm) structure provides the best output power.

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“…The main growth parameters of the samples are collected in Table 1. A background p-type doping of the InGaP layers resulted by electrical investigation of the samples [17,18].…”

Section: Experimentalsmentioning

confidence: 99%

“…The spectral responses of the MQW p-i-n diodes were obtained by preparing on the top surface a pattern of mesa structures, 500 mm in diameter, by conventional photolithography, as described in Ref. [18]. The PR signal was detected by conventional lock-in techniques and normalized to the system spectral response by using a calibrated Si photodetector.…”

Section: Experimentalsmentioning

confidence: 99%