Excess Si and passivating N and F atoms near the pyrolytic-gas-passivated ultrathin silicon oxide film/Si(100) interface Influence of ion-beam energy and substrate temperature on the synthesis of carbon nitride thin films by nitrogenion-assisted pulsed laser depositionThe lability of gold-oxide thin films in contact with air, pure solvents, or electrolyte solutions was investigated by monitoring film thicknesses using spectroscopic ellipsometry. Surface compositions were monitored using low-energy ion scattering. The oxide was inert in air over 24 h, but decomposed partially in tetrahydrofuran (THF) and water, and completely in ethanol, within the same period. The film thicknesses decreased significantly in THF solutions of Bu 4 NPF 6 and Bu 4 NBF 4 , but were more inert in solutions of Bu 4 NClO 4 and LiClO 4 in the same solvent, making the latter more suitable choices as supporting electrolytes in electrochemical studies.