1981
DOI: 10.1002/pssb.2221050247
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Determination of the Zero‐Field Splitting of Iron‐Boron Pairs in Silicon

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1983
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Cited by 9 publications
(2 citation statements)
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“…As the parameters g i and 1 DI cannot be obtained simultaneously from (9) they must be determined by measurements of the resonance magnetic fields either at some other microwave frequency or intermediate orientations with high accuracy. Using a special three-axes goniometer sample holder the parameters were determined from the angular dependence of the line positions taking into consideration the different limits of error for different intermediate angles 0" < 8 < 90" [3]. The parameters so obtained are listed in Table 1.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…As the parameters g i and 1 DI cannot be obtained simultaneously from (9) they must be determined by measurements of the resonance magnetic fields either at some other microwave frequency or intermediate orientations with high accuracy. Using a special three-axes goniometer sample holder the parameters were determined from the angular dependence of the line positions taking into consideration the different limits of error for different intermediate angles 0" < 8 < 90" [3]. The parameters so obtained are listed in Table 1.…”
Section: Resultsmentioning
confidence: 99%
“…The only microscopic information available on iron-boron centres is from earlier EPR studies by Ludwig and Woodbury [16], where the formation of an iron-boron pair in intentionally iron-doped p-type silicon is briefly discussed. The zero-field splitting of this centre was determined in [3]. First EPR information about the reaction kinetics is given in [17].…”
Section: Introductionmentioning
confidence: 99%