Determination of thermal and photothermal properties of an amorphous GaSe9 alloy

Abstract

We investigated the thermal and photothermal properties of an amorphous GaSe9 alloy produced by mechanical alloying considering the photoacoustic spectroscopy and differential scanning calorimetry (DSC) techniques. The room temperature thermal diffusivity of GaSe9 was determined using the open photoacoustic cell configuration considering the thermal diffusion and thermoelastic bending effects. The glass transition and crystallization processes were investigated through DSC measurements obtained at five heating rates, and glass transition, crystallization temperatures, and activation energies were determined. The crystallization mechanism was also determined.

Electronic and optical properties of amorphous GaSe thin films

“…Recently some of us investigated an amorphous alloy of the Ga-Se system, with the composition GaSe 9 (a-GaSe 9 ), produced by MA, regarding its structural [14], thermal and photothermal [14,15] properties. However, to develop possible applications of Ga-Se alloys and of GaSe 9 in particular, it is important to investigate their properties in the form of thin films.…”

Structural and thermal investigations of an amorphous GaSe9 alloy using EXAFS, cumulant expansion, and reverse Monte Carlo simulations

“…28 and will not be repeated here. EXAFS measurements on Se and Ga K edges were taken in the transmission mode at beam line D04B-XAFS1 of the Brazilian Synchrotron Light Laboratory-LNLS.…”

“…Different methods can be used to produce Ga-Se alloys in bulk, powder or thin films forms, such as chemical vapour deposition, 6 molecular beam epitaxy, 17 melt-quenching (MQ), 13,14,[18][19][20][21] Bridgman method, [22][23][24][25] vacuum evaporation, 13,14,26 and mechanical alloying (MA). 15,27,28 Many experimental techniques were used to investigate optical (transmittance, reflectance and absorption spectroscopies, [13][14][15]23,26 ellipsometry 25 ), vibrational (Raman spectroscopy 15,27,29 ), electrical (conductivity 26 ), thermal, 15,[18][19][20][21]27,28 and photothermal 28 properties of Ga-Se alloys. Since many of these properties are related to their atomic structures, investigation of structural properties in order to detera) kleber@fisica.ufpr.br mine average interatomic distances, coordination numbers, disorder, and asymmetry of the partial pair distribution functions g i j (r) becomes an important task, and experimental techniques such as x-ray diffraction (XRD) [30][31][32] and EXAFS 33,34 can be used to extract such information.…”

Gallium selenide clusters generated via laser desorption ionisation quadrupole ion trap time‐of‐flight mass spectrometry

“…low phonon energy, optical transparency from the visible to the infrared region, and high photoconductivity. [1][2][3][4][5][6] Gallium selenides are important in photocatalysis, 7 as transistors, 2 as photodetectors, 8 in photovoltaic devices where they are doped by copper and indium, 9,10 in solar cells, 11 in phase change recording media, 12,13 and as a part of chalcogenide glasses. [14][15][16] Gallium forms gallium selenide (GaSe) and digallium selenide (Ga 2 Se 3 ) compounds.…”

“…4,17 Gallium forms several selenides, e.g. mono-or digallium Ga m Se n (m = 1, 2 and n = 1-4) clusters, 18 as well as three-dimensional (3D)-framework structures such as Ga 10 Se 20 or Zn 4 Ga 16 Se 35 , 19 amorphous GaSe 9 alloys, 5 and Ga-Se quantum dots. 3,20 Five new gallium poly-selenides were prepared by solvothermal syntheses where the compounds consist of chains with alternating five-and six-membered rings.…”