Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology

Alt, K. W.; Yeats, R.; Hutchinson, C.P.; Kühn, Daniel; Low, T.S.; Iwamoto, M.; Adamski, Mariusz; Shimon, R.; Shirley, Tim; Bonse, M.; Kellert, F. G.; D'Avanzo, D.C.

doi:10.1016/j.microrel.2007.02.007

Cited by 4 publications

(3 citation statements)

References 3 publications

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“…It is also possible that such a net localized charge at the dislocation will facilitate the sticking of polar molecules floating in the air or outgassed from substrate containers. A process such as this could provide an explanation of the correlation of the infant mortality of HBTs and dislocation density in the substrates, as reported by Alt et al [1]. This would imply that resolution of this important problem would be improving the substrate cleaning, not the lowering of dislocation density in the substrate.…”

Section: Discussion Of the Results And Proposed Modelmentioning

confidence: 74%

“…These issues have frequently been attributed to problems related to device processing. However, recently statistical evidence was presented attributing the so-called infant mortality of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) to the detrimental effects of dislocations, which are present in GaAs substrates and propagate through the epitaxial layer [1]. In this work we present results pointing to another, so far not considered type of defect in epitaxial heterostructures, which can severely degrade the performance of devices relying on vertical transport.…”

Section: Introductionmentioning

confidence: 84%

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On the existence of submicron diameter current shunts in morphologically perfect device layers

Wasilewski

Dupont

Weyher

et al. 2010

Journal of Crystal Growth

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On the existence of submicron diameter current shunts in morphologically perfect device layers Wasilewski, Z. R.; Dupont, E.; Weyher, J. L.; Laframboise, S.; Buchanan, M.; Liu, H. C.Contact us / Contactez nous: nparc.cisti@nrc-cnrc.gc.ca. (2002) 182]. The hot-spots, with surface densities varying from 20 to 3000 cm À 2 for the wafers studied, are LED electroluminescence singularities, which can be readily observed at temperatures below $ 100 K. Their spatial FWHM is less than 1 mm and they can have peak intensities of more than three orders of magnitude higher than the uniform background emission caused by the dark current through the QWIP device. In most cases the hot-spots were observed on mirror smooth, morphological defect-free surfaces. These electroluminescence abnormalities result from highly localized electron injection channels in the QWIP portion of the device. As there is no morphological abnormality in their locations, these defects are undetectable with established wafer screening instruments such as Nomarski and Surfscan, yet may be very common in MBE-grown heterostructures. Although correlation with dislocations is observed, the great majority of dislocations do not give rise to the hot-spots, and there are many hot-spots, which are not located in the proximity of any dislocation. We therefore, propose that the hot-spots arise from a local alloy separation in ternary layers, induced by floating organic molecules or molecular contamination clusters, resulting in nanowire-like defects. Highly localized drops in the layer resistivity caused by such defects will adversely affect the performance of any devices relying on vertical transport, particularly if the device current depends very strongly on the height of the potential barriers employed, such as in quantum well infrared photodetectors or resonant tunneling diodes. Also, for devices working at high current densities, such as certain lasers or HBTs, the presence of such defects may lead to early device failure. Crown

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Section: Discussion Of the Results And Proposed Modelmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 84%

On the existence of submicron diameter current shunts in morphologically perfect device layers

Wasilewski

Dupont

Weyher

et al. 2010

Journal of Crystal Growth

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“…The general approach consists of modeling the problem as a mix of two probabilistic distributions corresponding to early and other failures (Barnett et al , 2003; Chan and Meeker, 1999; Dong and Nassif, 2018; Huang et al , 2010; Xin et al , 2005). Some practical applications are also found within electrical engineering, as reported by Alt et al (2007), Bouanaka and Healy (1988), He et al (2016) and Kuehl (2002).…”

Section: Literature Reviewmentioning

confidence: 91%

The impact of early failures on maintenance costs: an empirical study in Latin America

Peimbert-García

Vázquez-Serrano

Limón-Robles

2021

JQME

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PurposeLiterature shows that the economics of early failures in maintenance and electric utilities have not been deeply analyzed. This study aims to focus on quantifying the economic impact that early failures in current transformers have on total maintenance costs. The empirical study is conducted in a regional transmission division of an electric utility located in Mexico.Design/methodology/approachThe utility's database was accessed to collect 219 maintenance records. Clustering techniques were used to identify early failures from a bimodal distribution of failures. Confirmatory goodness-of-fit procedures followed the analysis, and finally, direct and opportunity costs were estimated by adapting the cost-of-quality (PAF) Model.FindingsAround 11% of all maintenance activities are triggered by early failures, and they account for up to US$2.2m during the eight-year period under study, which represents 16% of total maintenance costs. Additionally, opportunity costs represent close to two-thirds of the total costs due to early failures. This was obtained after finding and validating a clear-cut border of 3.5 months between early failures and the rest.Originality/valueFailures in energy grids and power transmission can have a large economic impact on the power industry and the society in general. Thus, the maintenance function in equipment such as current transformers is a crucial entry of the budget of any electric utility. This study is one of the very few that highlights the magnitude and importance of direct and opportunity costs derived from early failures.

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9.3 Diode lasers in the near infra-red spectral range

Crump

2011

Laser Systems

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Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology

Cited by 4 publications

References 3 publications

On the existence of submicron diameter current shunts in morphologically perfect device layers

On the existence of submicron diameter current shunts in morphologically perfect device layers

The impact of early failures on maintenance costs: an empirical study in Latin America

9.3 Diode lasers in the near infra-red spectral range

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