Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition

Abstract

Cataloged from PDF version of article.Resistivity and Hall effect measurements on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal organic chemical vapor deposition have been carried out as a function of temperature (20-300 K) and magnetic field (0-1.4 T). Variable magnetic field Hall data have been analyzed using the improved quantitative mobility spectrum analysis technique. The mobility and density of the two-dimensional electron gas at the AlGaN/GaN interface and the two-dimensional hole gas at the GaN/AIN interface are separated by quantitative mobility spectrum analysis. The analysis shows that two-channel conduction is present in nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrate. (c) 2007 Elsevier B.V All rights reserved

Double subband occupation of the two-dimensional electron gas in InxAl1−xN/AlN/GaN/AlN heterostructures with a low indium content (0.064≤x≤0.140) barrier

“…In a previous study, we presented extracted two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) carriers with low mobilities in an AlGaN/GaN/AlN heterostructure grown on sapphire [23]. In the present study, two distinct electron carriers and a hole carrier show 2D behavior with respect to the previous study.…”

“…carriers can be considered as the carriers populated at the first two subbands of a 2DEG system, which are located at the InAlN/AlN/GaN interface. 2DHG is populated at the GaN buffer/AlN buffer [23].…”

Well parameters of two‐dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

“…For the present study, this condition seems to be barely satisfied, in which the results scatter in the QMSA data. However, we successfully showed extracted 2DEG and two-dimensional hole gas (2DHG) carriers with low mobilities in AlGaN/GaN/AlN heterostructures in a previous study [9]. From figure 3 it can be seen that one electron (denoted with triangles) and one hole carrier (denoted with circles), which are obtained from QMSA, are contributing to charge transport throughout the entire studied temperature range.…”

Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure

“…Very few reports on the detection of 2DHG were published [9][10][11][12] and even fewer on 2DHG within the transition layer stack. 13 In Refs. 9-12, the 2DHGs discussed are electrically connected to the source and drain contacts, thus behaving as conductive channels (and not buried in the epi-structure or transition layer as discussed in this manuscript).…”

“…In addition, many of these analyzed structures include a heavily Mg doped p-type cap, making the origin of the 2DHG fuzzy. In those publications where the 2DHG at transition layers' interface is the focus of study, 13 variable magnetic fields and temperature Hall effect measurements together with the mobility spectrum analysis (i-QMSA) were employed to detangle the contribution of 2DHG from the one given by the 2DEG within the channel. The conclusion whether 2DHG exists at the interface or not was far from being obvious.…”