Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy

Abstract

In 2 O 3 is a promising partner of InN to form InN/In2O3 heterosystems. The valence band offset (VBO) of wurtzite InN/cubic In2O3 heterojunction is determined by x-ray photoemission spectroscopy. The valence band of In2O3 is found to be 1.47±0.11 eV below that of InN, and a type-I heterojunction with a conduction band offset (CBO) of 0.49–0.99 eV is found. The accurate determination of the VBO and CBO is important for use of InN/In2O3 based electronic devices.

Atomically Dispersed Indium Sites for Selective CO2 Electroreduction to Formic Acid

“…The N 1s spectrum (Figure b) was deconvoluted into pyridinic (398.3 eV), pyrrolic (400.2 eV), quaternary (401.0 eV), and graphitic (402.0 eV) in In–N–C. Note that the peak at 399.2 eV reveals the existence of porphyrin-like moieties assigned to the metal–nitrogen coordination. , The In 3d XPS spectrum (Figure c) shows the binding energy of In–N–C to be greater than those of In and In 2 O 3 , which can be explained by the existence of In–N bond located at about 445 eV. , Moreover, X-ray absorption near-edge structure (XANES) results confirm the higher valence state of In in In–N–C (Figure S7). The commercial In nano powder was partly oxidized in air explaining the subpeak of In 3+ (In 3d 5/2 ) in Figure c.…”

Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X‐ray photoelectron spectroscopy

“…However, to date there is a lack of experimental data available on the interface band alignment parameters for GaN/Ge 3 N 4 heterosystem. X-ray photoelectron spectroscopy (XPS) has been demonstrated to be a direct and powerful tool for measuring the valence band (VB) discontinuities of heterojunctions [5][6][7][8]. In this paper, by using XPS, we determined the valence band offset (VBO) as well as the conduction band offset (CBO) values of the GaN/Ge 3 N 4 /Ge heterojunctions.…”

“…Another factor that may affect the precision of the VBO value is the strain-induced piezoelectric field. The nitrides are piezoelectric materials, and the strain will induce static electric fields via the piezoelectric effect [6]. …”

Comprehension of Postmetallization Annealed MOCVD-TiO2on(NH4Lee1, Yen2 2012Active and Passive Electronic Components1000View full textAdd to dashboardCite

“…The X-ray photoelectron spectroscopy (XPS) core level spectra of In 3d 5/2 of InP without and with (NH 4 ) 2 S treatments are shown in Figures 4(a) and 4(b), respectively. For InP without (NH 4 ) 2 S treatment, the strong In 3d 5/2 XPS peak at 444.7 eV can be attributed to In-P bond [23] and the peak at 443.7 eV is from In-O bond [24]. For InP with (NH 4 ) 2 S treatment, a new strong peak at 444.9 eV [25] and a small satellite peak at 443.9 eV are from In-S and In-O, respectively.…”