Determination of MBE grown wurtzite GaN/Ge<sub>3</sub>N<sub>4</sub>/Ge heterojunctions band offset by X‐ray photoelectron spectroscopy

Kumar, Mahesh; Rajpalke, Mohana K.; Roul, Basanta; Bhat, Thirumaleshwara N.; Kalghatgi, A. T.; Krupanidhi, S. B.

doi:10.1002/pssb.201147318

Cited by 19 publications

(5 citation statements)

References 19 publications

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“…From XPS spectra at the take‐off angle of 45°, the

E_{GaN}^{Ga 2 p_{3 / 2}} - E_{GaN}^{VBM}

and

E_{{Al}_{2} {normalO}_{3}}^{Al 2 p} - E_{{Al}_{2} {normalO}_{3}}^{VBM}

were calculated to be 1,115.4 and 71.2 eV. The peak position of Ga 2 p 3/2 with respect to the VBM was in good agreement with reported values (1115.49−1116.47 eV) . The energy difference between Al 2p and VBM of Al 2 O 3 was comparable to the reported thermal ALD‐Al 2 O 3 (70.74−71.75 eV) , plasma enhanced ALD‐Al 2 O 3 (70.5 eV) and (0001) sapphire (70.84−70.85 eV) .…”

Section: Resultssupporting

confidence: 87%

Interface characterization of atomic layer deposited Al₂O₃ on m‐plane GaN

Jia

Wallace

Echeverría

et al. 2017

Physica Status Solidi (b)

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The interfaces between dielectrics and semiconductors play a dominant role in the performance of both electronic and optoelectronic devices. In this article, we report the band offset characterization of atomic layer deposited Al2O3 on non‐polar m‐plane (1true1¯00) GaN grown by hybrid vapor phase epitaxy using X‐ray photoelectron spectroscopy (XPS). The surface band bending of GaN was investigated by employing the angle resolved XPS (ARXPS). The Fermi level pinning is found to be at ∼2.4 eV above valence band maximum near the surface. The valence band offset and conduction band offset at the Al2O3 and m‐plane GaN interface were determined to be 1.0 and 2.2 eV respectively. Electrical measurement was done by using metal–oxide–semiconductor capacitor. Capacitance–voltage hysteresis loop indicated low density of oxide traps. The frequency dependent C–V curves also showed a small dispersion.

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“…From XPS spectra at the take‐off angle of 45°, the

E_{GaN}^{Ga 2 p_{3 / 2}} - E_{GaN}^{VBM}

and

E_{{Al}_{2} {normalO}_{3}}^{Al 2 p} - E_{{Al}_{2} {normalO}_{3}}^{VBM}

Section: Resultssupporting

confidence: 87%

Interface characterization of atomic layer deposited Al₂O₃ on m‐plane GaN

Jia

Wallace

Echeverría

et al. 2017

Physica Status Solidi (b)

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“…The estimated E g values for the Na-α′-GeGaON samples of M200 and M100 were 3.31 and 3.40 eV, respectively, appreciably smaller than the E g for β-Ge 3 N 4 . Since the previous theoretical works ,, have predicted larger E g values for α-Ge 3 N 4 compared to the β polymorph, the observed narrowing of the band gap in Na-α′-GeGaON may indicate the contribution of Ga 4s and 4p states in the conduction band, further proving the formation of the α′ solid solution.…”

Section: Results and Discussionsupporting

confidence: 74%

Na-α′-GeGaON Solid Solution Analogous to α′-SiAlON: Synthesis, Crystal Structure, and Potentiality as a Photocatalyst

2016

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We demonstrated, for the first time, formation of the Na-α'-GeGaON (NamGe12-(m+n)Gam+nOnN16-n) solid solution, an analogue of the well-established α'-SiAlON system. We successfully synthesized single-phase powder samples by reduction-nitridation of Na2CO3-GeO2-Ga2O3, in the solubility range of m ≈ 0.8-1.7 with n ≈ 0.2-0.3. The Rietveld refinement of powder X-ray diffraction data for Na-α'-GeGaON was conducted on the basis of the space group P31c of α'-SiAlON, and the refinement converged with RB = 1.78% and RF = 1.02% for the composition of Na1.26(1)Ge10.50Ga1.50O0.24(1)N15.76(1), indicating reliably the isomorphism between the SiAlON and GeGaON systems. The results of (23)Na solid-state nuclear magnetic resonance (NMR) spectroscopy clearly showed a single peak at the chemical shift of ∼ 16 ppm, further proving the accommodation of Na in the α'-GeGaON matrix with the expected coordination environment. The synthesized Na-α'-GeGaON exhibited stable photocatalytic activity for the evolution of H2 from water under ultraviolet irradiation, which was comparable to that attained by β-Ge3N4.

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“…E VBM was determined by linearly fitting the leading edge of the VB spectra to the base line. 17 In 3d 5=2 ðiÞ is the CL binding energy difference of Sb3d 5/2 and In3d 5/2 measured at the heterointerface from 5 nm InGaAs/310 nm GaAsSb sample of each structure. The conduction band offset (CBO) can be estimated by 17…”

Section: Methodsmentioning

confidence: 99%

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Zhu

Jain

Vijayaraghavan

et al. 2012

Journal of Applied Physics

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Articles you may be interested inTunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction J. Appl. Phys. 113, 094502 (2013) The compositional dependence of effective tunneling barrier height (E beff ) and defect assisted band alignment transition from staggered gap to broken gap in GaAsSb/InGaAs n-channel tunnel field effect transistor (TFET) structures were demonstrated by x-ray photoelectron spectroscopy (XPS). High-resolution x-ray diffraction measurements revealed that the active layers are internally lattice matched. The evolution of defect properties was evaluated using cross-sectional transmission electron microscopy. The defect density at the source/channel heterointerface was controlled by changing the interface properties during growth. By increasing indium (In) and antimony (Sb) alloy compositions from 65% to 70% in In x Ga 1Àx As and 60% to 65% in GaAs 1Ày Sb y layers, the E beff was reduced from 0.30 eV to 0.21 eV, respectively, with the low defect density at the source/channel heterointerface. The transfer characteristics of the fabricated TFET device with an E beff of 0.21 eV show 2Â improvement in ON-state current compared to the device with E beff of 0.30 eV. On contrary, the value of E beff was decreased from 0.21 eV to À0.03 eV due to the presence of high defect density at the GaAs 0.35 Sb 0.65 /In 0.7 Ga 0.3 As heterointerface. As a result, the band alignment was converted from staggered gap to broken gap, which leads to 4 orders of magnitude increase in OFF-state leakage current. Therefore, a high quality source/channel interface with a properly selected E beff and well maintained low defect density is necessary to obtain both high ON-state current and low OFF-state leakage in a mixed As/Sb TFET structure for high-performance and lower-power logic applications. V C 2012 American Institute of Physics. [http://dx

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Determination of MBE grown wurtzite GaN/Ge₃N₄/Ge heterojunctions band offset by X‐ray photoelectron spectroscopy

Cited by 19 publications

References 19 publications

Interface characterization of atomic layer deposited Al₂O₃ on m‐plane GaN

Interface characterization of atomic layer deposited Al₂O₃ on m‐plane GaN

Na-α′-GeGaON Solid Solution Analogous to α′-SiAlON: Synthesis, Crystal Structure, and Potentiality as a Photocatalyst

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

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Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X‐ray photoelectron spectroscopy

Cited by 19 publications

References 19 publications

Interface characterization of atomic layer deposited Al2O3 on m‐plane GaN

Interface characterization of atomic layer deposited Al2O3 on m‐plane GaN

Na-α′-GeGaON Solid Solution Analogous to α′-SiAlON: Synthesis, Crystal Structure, and Potentiality as a Photocatalyst

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

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Determination of MBE grown wurtzite GaN/Ge₃N₄/Ge heterojunctions band offset by X‐ray photoelectron spectroscopy

Interface characterization of atomic layer deposited Al₂O₃ on m‐plane GaN

Interface characterization of atomic layer deposited Al₂O₃ on m‐plane GaN