Deterministic Magnetization Switching via Tunable Noncollinear Spin Configurations in Canted Magnets

Abstract

Spin obit torque (SOT) driven magnetization switching has been used widely for encoding consumption-efficient memory and logic. However, symmetry breaking under a magnetic field is required to realize the deterministic switching in synthetic antiferromagnets with perpendicular magnetic anisotropy (PMA), which limits their potential applications. Herein, we report all electric-controlled magnetization switching in the antiferromagnetic Co/Ir/Co trilayers with vertical magnetic imbalance. Besides, the switching polarity could be reversed by optimizing the Ir thickness. By using the polarized neutron reflection (PNR) measurements, the canted noncollinear spin configuration was observed in Co/Ir/Co trilayers, which results from the competition of magnetic inhomogeneity. In addition, the asymmetric domain walls demonstrated by micromagnetic simulations result from introducing imbalance magnetism, leading to the deterministic magnetization switching in Co/Ir/Co trilayers. Our findings highlight a promising route to electric-controlled magnetism via tunable spin configuration, improve our understanding of physical mechanisms, and significantly promote industrial applications in spintronic devices.

Controllable Spin–Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations

“…Spinorbit torque (SOT) enables the electric manipulation of the spin configuration for implementing energy-efficient spintronic integration. − Currently, SOT-driven systems have been widely explored in many respects, involving magnetization switching, , domain wall motion, , magnetic oscillation excitation, , and so on. − For a SOT-based storage cell, the key point is to realize field-free SOT-driven magnetization switching in a heavy metal/ferromagnet (HM/FM) heterostructure . Up to now, it was demonstrated that SOT-driven magnetization switching can be tuned by an engineering interfacial or interlayer exchange interaction. − Furthermore, inhomogeneous magnets mainly including a structure/component gradient have been successfully fabricated to achieve deterministic magnetization switching. − Especially, symmetry-dependent field-free magnetization switching was observed in an epaxial CuPt/CoPt bilayer due to an interfacial low-symmetry point group .…”