2004
DOI: 10.1117/12.537539
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Developable bottom antireflective coatings for 248-nm and 193-nm lithography

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Cited by 4 publications
(4 citation statements)
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“…Among these technologies is the use of DBARCs for implant layer applications beyond the 65-nm node (1). Traditionally, for implant layers a dyed photoresist was paired with a top anti-reflective coating (TARC).…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Among these technologies is the use of DBARCs for implant layer applications beyond the 65-nm node (1). Traditionally, for implant layers a dyed photoresist was paired with a top anti-reflective coating (TARC).…”
Section: Introductionmentioning
confidence: 99%
“…As the integrated circuit (IC) industry evolves, new technologies are developed to solve technical issues. Among these technologies is the use of DBARCs for implant layer applications beyond the 65-nm node (1). Traditionally, for implant layers a dyed photoresist was paired with a top anti-reflective coating (TARC).…”
Section: Introductionmentioning
confidence: 99%
“…Developer-soluble BARCs (DBARCs) are different than traditional dry-etch BARCs in that DBARCs are patterned with the resist during the develop step (1,3). The original application for DBARCs was to enhance the patterning of implant layers (3,4,5). These initial DBARCs developed isotropically and were adjustable by process modifications (6).…”
Section: Introductionmentioning
confidence: 99%
“…Photosensitive DBARCs have photoimageable properties and resolve patterns irrespective of upper resist layer [9][10][11][12][13][14][15][16][17][18]. Therefore, they have better resolution and through-pitch performance which are required for logic devices and critical layers.…”
mentioning
confidence: 99%