Developer temperature effect on negative deep ultraviolet resists: Characterization, modeling, and simulation

Abstract

Probabilistic gel formation theory in negative tone chemically amplified resists used in optical and electron beam lithography J.We consider the effect of developer ͑solvent͒ temperature in the dissolution of both the exposed and unexposed parts of the resist. The spin-formatted resist film tends to have macromolecules oriented parallel to the substrate surface. The orientation of the resist macromolecules introduces an anisotropic component to the etch rate: higher in the direction parallel to the substrate surface and lower in the perpendicular one. We performed a series of experiments on resist-coated Si wafers using a stepper and a deep ultraviolet source at 248 nm using SNR-248 negative resist. We obtained scanning electron micrographs for various developer temperatures. The variation of the lateral etch rate manifested itself in sidewall profile slopes and is compatible with the entropy directional flow. Simulation using the Cellular Automata model predicted identical results.

Effects of Initial Composition and Oxygen Pressure on Formation of Quasi-Nanocrystalline Ba–Zn Ferrite Powders during Self-Propagating High-Temperature Synthesis

“…experimentally by extensive comparison of the simulator results with experimental ones. The simulator results were found to be in very good agreement with the experimental results for various developer temperatures [8], for various exposure energy doses [9] and for various distances between parallel and isolated lines [10]. The simulator results were also found to be in very good agreement with the experimental results in the case of negative resist corner rounding [11].…”

Study of lithography profiles developed on non-planar Si surfaces

“…This simulator has been tested using all the well known etch rate distribution functions [5], and it has also been verified experimentally by extensive comparisons of the simulator results with experimental ones. The simulator results were found to be in very good agreement with the experimental results for various developer temperatures [8], for various exposure energy doses [9], and for various distances between parallel and isolated lines [10]. The simulator results were also found to be in very good agreement with the experimental results in the case of negative resist corner rounding [11].…”

Negative resist profiles in 248 nm photolithography: experiment, modelling and simulation

“…A temperature increment causes more intense molecular vibrations which result in higher dissolution rates of polymers [20]. It is therefore expected that an increment in developer temperature will result in faster dissolution of both exposed and unexposed parts of the resist.…”