Large-scale crystalline boron nanowires (BNWs) were synthesized by a simple chemical vapor deposition method on Au-coated Si substrates using two kinds of innoxious and inexpensive reactant materials as the precursor at relatively low temperature (≤1000°C). The morphology and structural properties of samples were characterized by SEM, TEM, SAED, and XPS analytic instruments. The BNWs have lengths of several tens of micrometers with diameters of 80-150 nm. SAED and HRTEM analytic results testified that BNWs were single crystal core with a thin oxide sheath. By comparison of the BNW samples synthesized at difference temperatures, we conclude that BNWs have lower growth rate at 950°C, whilst the suitable growth rate can be gained at 1000°C. This result shows that BNWs can be synthesized via one step CVD process at 1000°C, and overly high growth temperature (≥1200°C) is probably unnecessary. boron nanowires, CVD method, low temperature PACS: 81.05.Bx, 81.10.BkIn recent years, one-dimensional (1D) boron nanostructure has aroused greatly interesting research from both scientific and technological areas, because it has unique chemical and physical properties and its theoretically tubular structure may have higher electrical conductivity than carbon nanotubes [1][2][3][4][5][6][7]. These properties make boron or boride nanostructures potentially use in high-temperature devices, fusion-reactor wall components, thermoelectric energy conversion, especially for the application of field emission (FE), cold-cathode materials, field effect transistors (FET), and so on [8,9]. It is interesting and important to synthesis and investigation of boron nanostructures and their properties.Many efforts focused on synthesizing amorphous and crystalline BNWs and boron nanobelts (BNBs). The synthesis methods include chemical vapor deposition (CVD) [10,11], laser ablation [12-15], vapor-transport [16,17], and magnetron sputtering [18,19], etc. Among these methods motioned above, CVD is a especially attractive method because of the compatibility of CVD with conventional semiconductor device fabrication, and it could allow controlled, selective growth of nanostructures by patterning metal catalysts on the substrates.Although the synthesis of amorphous and crystalline BNWs or BNBs with CVD method have been reported, some deficiencies still exist. For example, the reaction source (B 2 H 6 ) is poisonous, which is harmful to the researchers and environment [10]. In one-step CVD process, the reaction temperature is relatively high (≥1200°C) when the reactants are solid powders [11]. In general, a higher reaction temperature will definitely be accompanied with high deposition rate and growth rate of nanowires. It is well known that lower growth rate is helpful to improve the uni-