Developing the Ka-band GaN power HEMT devices

Zhou, Jianjun; Dong, Xiaoli; Kong, Ceng; Kong, Yuechan; Ren, C.; Li, Z. H.; Chen, T. S.; Chen, C.; Zhang, B.

doi:10.1109/gsmm.2012.6314414

Cited by 5 publications

(1 citation statement)

References 12 publications

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“…A 0.8 µm gate length GaN HEMT device was fabricated and measured. Device process was used to fabricate GaN HEMT on self-standing GaN substrate is similar with the report in reference [9]. Ti/Al/Ni/Au was used to form source and drain ohmic contacts.…”

Section: Device Structure and Processingmentioning

confidence: 99%

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

Zhou¹,

Li²,

Lu³

et al. 2013

AMM

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In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

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Section: Device Structure and Processingmentioning

confidence: 99%