Development and Challenges of Reliability Modeling From Transistors to Circuits

Abstract

The integration density of electronic systems is limited by the reliability of the integrated circuits. To guarantee the overall performance, the integrated circuit reliability must be modeled and analyzed at the early design stage. This paper reviews some of the most important intrinsic aging mechanisms of MOSFETs and elaborates the physical mechanism of the coupling between aging effects. Then the progress in reliability modeling under static and dynamic operational voltages is reviewed. It is found that although these models can accurately predict the degradation in short term, they are with large errors for the long-term degradation prediction. Besides, for the circuit-level reliability modeling and simulation approach, there are still problems to be solved. This article aims to provide guidance for researchers and practitioners in integrated circuit field, and highlight the challenges for reliability research. It is of great significance to the optimization of the reliability of integrated circuits.

Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

“…Subsequently, the parameters require adjustment through comparison with the measured gain curve. Combined with the analysis of the influence of parameters in 3.2 on circuit gain and the extraction of modeling parameter values and units of HBT tube and GaAs HBT tube in reference [7][8][9][10], the simulation gain curve is obtained after multiple fitting, as shown in Fig. 10.…”

“…Modeling RF devices serves a dual purpose: it enhances the success rate of circuit design and facilitates the analysis of electromagnetic compatibility characteristics within the RF system. This process is immensely beneficial for subsequent improvements in system stability [10][11][12][13][14]. The traditional approach to modeling integrated circuits involves testing the chip's internal parameters using a vector network analyzer.…”