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The integration density of electronic systems is limited by the reliability of the integrated circuits. To guarantee the overall performance, the integrated circuit reliability must be modeled and analyzed at the early design stage. This paper reviews some of the most important intrinsic aging mechanisms of MOSFETs and elaborates the physical mechanism of the coupling between aging effects. Then the progress in reliability modeling under static and dynamic operational voltages is reviewed. It is found that although these models can accurately predict the degradation in short term, they are with large errors for the long-term degradation prediction. Besides, for the circuit-level reliability modeling and simulation approach, there are still problems to be solved. This article aims to provide guidance for researchers and practitioners in integrated circuit field, and highlight the challenges for reliability research. It is of great significance to the optimization of the reliability of integrated circuits.

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To take the influence of the aging effect on circuit performance into account at the early design stage, it is necessary to establish an accurate aging simulation model. However, there is a great discrepancy in the reversely deduced MOSFET transistor degradation from the aging model. To deal with that problem, a method is proposed in this paper that establishes the conversion relationship between the simulation parameters and the degradation of MOSFET transistor parameters. The degradation values were converted into model parameters that characterize the aging effect in SPICE, and the results show that aging simulation accuracy was improved to within 0.1%, which would bring great convenience to circuit reliability simulation and analysis. Lastly, we analyze the aging effect on the ring oscillator circuit via the model.

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