Development and characterization of 193-nm ultra-thin resist process

Amblard, Gilles R.; Peters, Richard D.; Cobb, Jonathan; Edamatsu, Kunishige

doi:10.1117/12.474227

Cited by 5 publications

(2 citation statements)

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“…Ultrathin CARs are known to display high linewidth roughness (LWR) which poses a risk on the final reliability of the intended electrical devices. Past work [35,36,37] has indicated that for the case of conventional KrF and ArF CARs based on blending of the PAG/quencher with the polymer resin, any unevenness on the distribution of such molecular components is exacerbated in the ultrathin film regime and results in larger feature edge variations. For the case of polymer-bound PAG-based CARs where the photosensitive moiety is attached to a polymer sidechain, the distribution is expected to be highly uniform throughout the film.…”

Section: Thin Resist Image Transfer Utilizing Metal-based Hardmask Vsmentioning

confidence: 98%

Pattern collapse mitigation strategies for EUV lithography

et al. 2012

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In this study, a comprehensive approach towards assessing pattern collapse challenges and solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is undertaken. The fundamental forces that drive pattern deformation are reassessed in order to propose a generalized design criterion for EUV photoresists and aqueous surfactanated rinses. Furthermore, ultimate pattern collapse solutions such as solvent drying utilizing pressurized fluids (supercritical CO 2 ) are exemplified for sub-60nm pitch EUV patterning. In parallel, alternative EUV integration schemes that use a metal-based hardmask (MHM) are studied using a specifically tailored self-assembled monolayer (SAM) to prevent delamination-driven pattern collapse due to resist-hardmask interfacial adhesion failure. Finally, the marginal image transfer of 40nm pitched L/S of ultrathin EUV resist into a SiARC-underlayer stack appears to be gated by the EUV resist resolution limit and the reduced film thickness budget. An alternative method for achieving improved postetch line width roughness (LWR) with an ultrathin MHM-based integration scheme is herein demonstrated.

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Section: Thin Resist Image Transfer Utilizing Metal-based Hardmask Vsmentioning

confidence: 98%

Pattern collapse mitigation strategies for EUV lithography

et al. 2012

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“…In addition, it has been reported that the initial chemical uniformity is also another key factor affecting the printed features. There are more and more study dealing with this issue, especially for ultra-thin photoresist (< 50 nm) required by the future EUV and EB process [5]- [7] . There are many approaches to improve the photoresist contrast in the past.…”

Section: Introductionmentioning

confidence: 99%

Photobase generator and photo decomposable quencher for high-resolution photoresist applications

Wang

Chang

2010

SPIE Proceedings

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As the critical pitch continues to shrink for advanced technology nodes and the EUV tool is not yet mature, the demand for ArF high-contrast resist becomes stronger than ever. In this paper, we discuss the impact of photosensitive quenchers to lithographic performance. Two types of photosensitive quencher, photo-base generator (PBG) and photo decomposable quencher (PDQ), are studied for its ability to extend the life of immersion ArF lithography. With conventional photoresists using normal non-photosensitive quenchers, the aerial image was substantially linearly transferred to the acid image of the photoresist stimulated by photo acid generator (PAG). The new PBG or PDQ serves as one additional photosensitive component. Such photosensitive quencher changes its base level after exposure. Thus, it modifies the aerial image for better imaging performance. We will present and discuss the imaging results from various formulations of photosensitive quencher and variation in its concentration. The defect performance of these new approaches will also be characterized.

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Resist nano-modification technology for enhancing the lithography and etching performance

You

Lei

2005

Microelectronic Engineering

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Development and characterization of 193-nm ultra-thin resist process

Cited by 5 publications

References 0 publications

Pattern collapse mitigation strategies for EUV lithography

Pattern collapse mitigation strategies for EUV lithography

Photobase generator and photo decomposable quencher for high-resolution photoresist applications

Resist nano-modification technology for enhancing the lithography and etching performance

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