Development and characterization of photodiode n-ZnO/p-Si by Radio Frecuency Sputtering, a sensor with low voltage operation and its response to visible and UV light

Surface Engineering in SnO2/Si for High-Performance Broadband Photodetectors

“…They have been widely used in communication technology, scientific measurement, astronomy observation, fire monitoring, and biomedical research. − Si-based photodetectors possess an incomparable advantage because of their compatibility with the microelectronics industry . Si-based photodetectors are mainly used to detect visible and near-infrared (NIR) light, while compound semiconductors such as GaN are commonly used to detect ultraviolet (UV) light. , Nevertheless, the responsivity of most commercialized silicon photodetectors compatible with semiconductor technology remains at 0.7 A/W, , except for some silicon photodetectors − with a complex preparation process, high cost, and preparation conditions that are difficult to control.…”

“…5 Si-based photodetectors are mainly used to detect visible and near-infrared (NIR) light, 6 while compound semiconductors such as GaN are commonly used to detect ultraviolet (UV) light. 7,8 Nevertheless, the responsivity of most commercialized silicon photodetectors compatible with semiconductor technology remains at 0.7 A/ W, 9,10 except for some silicon photodetectors 11−14 with a complex preparation process, high cost, and preparation conditions that are difficult to control.…”

Electrical Properties of The Heterojunction Diode Produced Based on IGZO Thin Film

“…of forward current to reverse current IF/IR) of IGZO/Si heterojunction diodes in darkness and under the illumination were determined to be RRdarkness=1.26 and RRillumination=3.14, respectively. So, it has been observed that the hetero-junction diode exhibits a better rectifying behaviour in illumination condition (Chávez-Urbiola et al 2019, Ismail et al 2019. The electrons occupy in the valence band of p-Si that are excited by the photon, which transfer to its conduction band (in Fig 5c).…”

Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity

“…[1], [3], [4] Therefore, ZnO is usually combined with p-doped semiconductors, most commonly with silicon, which is a narrow-bandgap material and extends the operation of ZnO optoelectronic devices to the visible-near infrared (vis-NIR) spectral range. Indeed, ZnO/p-Si heterojunctions have been employed repeatedly as solar cells, [11], [12] UV-visible photodetectors, [8], [13]- [22] and LEDs, [23], [24], [25] and recently we demonstrated NIR-extended photoresponse in a lasermicrostructured ZnO/p-Si photodetector. [26] A wide variety of ZnO/p-Si photodetectors have been developed with high response in the UV-visible spectral range.…”