Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics

Затько, Б.; Dubecký, F.; Boháček, P.; Huran, Jozef; Nečas, Vladimı́r; Ryć, L.

doi:10.1016/j.nima.2010.06.145

Cited by 9 publications

(7 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We have studied detectors based on semi-insulating (SI) GaAs for many years and we have shown their characteristics and potential of using in detection of ionizing radiation [1][2][3]. The investigation of detector degradation under various types of radiation is important.…”

Section: Introductionmentioning

confidence: 99%

The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs

et al. 2016

View full text Add to dashboard Cite

In this work we fabricated detectors based on semi-insulating GaAs and studied their electrical properties (current-voltage characteristics, galvanomagnetic measurements) after irradiation with 5 MeV electrons from a linear accelerator up to a dose of 104 kGy. A series of detectors were prepared using Ti/Pt/Au Schottky contact with 1 mm diameter. The thickness of the base material was about 230 µm. A whole area Ni/AuGe/Au ohmic contact was evaporated on the back side. For galvanomagnetic measurements we used three samples from the same wafer. All samples were irradiated by a pulse beam of 5 MeV electrons using the linear accelerator in 11 steps, where the accumulative dose increased from 1 kGy up to 104 kGy. Also different dose rates (20, 40 and 80 kGy/h) were applied to the samples. After each irradiation step we performed electrical measurement of each sample. We analyze the electron Hall mobility, resistivity, electron Hall concentration, breakdown voltage and reverse current of samples before and after irradiation using different dose rates. K: Radiation damage to detector materials (solid state); Solid state detectors; Materials for solid-state detectors 1Corresponding author.

show abstract

Section: Introductionmentioning

confidence: 99%

The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Their cooling has improved the energy resolution, which can be seen in figure 6(a). Improved energy resolution in gamma spectrometry was also observed with non-degraded GaAs detectors in [10,11].…”

Section: Jinst 17 C12018mentioning

confidence: 75%

“…Several studies on gamma spectrometry of cooled GaAs detectors have already been published [8][9][10][11], observing a decrease in reverse current and an improvement in spectrometric properties during cooling. The reverse current drop of an order of magnitude for each 20 • C temperature decrease was measured accompanied by an improvement in detector relative energy resolution.…”

Section: Introductionmentioning

confidence: 99%

GaAs radiation-degraded detectors: gamma spectrometry at lowered temperatures

et al. 2022

View full text Add to dashboard Cite

The GaAs detectors are radiation hard against a few MGy of high-energy (MeV) electrons. The main reason for detector functionality degradation is the reduction of their charge collection efficiency and together with reverse current increase these facts cause the drop of the signal to noise ratio down to close to 1, disabling detector functionality. In this paper, the lowering of detector temperature has improved the spectra of less ionizing particles, the 59.5 keV gamma rays, measured by semi-insulating GaAs pad detectors, which were first degraded by 8 MeV electrons with a dose of 200 kGy. The signal to noise ratio improved by about 30%, from 1.09 at room temperature up to 1.42 at 276 K. The photo-peak was easily distinguishable from the noise during cooling and the calculated detector relative energy resolution improved from 46% at room temperature to 34% at 276 K. A mild decrease in detector charge collection efficiency was observed, by about 5% of its initial value, when cooling the detector to 276 K.

show abstract

“…First, GaAs detectors were intensively studied in the 1990's, when their application in the Large Hadron Collider experiments was considered [1]. Three of its material forms, the bulk semi-insulating [1][2][3], the bulk Cr-doped [4] as well as the epitaxially grown [5,6] GaAs were used for detector preparation onwards. The bulk SI GaAs detectors are characterized by a developed material preparation technology but suffer from material inhomogeneity leading to poorer energy resolution than silicon detectors.…”

Section: Introductionmentioning

confidence: 99%

Spreading of an active region of semi-insulating GaAs detectors after radiation degradation

Sagatova,

Kurucova,

Necas

et al. 2024

J. Inst.

View full text Add to dashboard Cite

The radiation hardness of GaAs detectors against high-energy electrons goes up to a few MGy. Their degradation is mainly connected to the decrease of the charge collection efficiency and the increase of the reverse current. On the other hand, an improvement in detection efficiency was observed at low degradation doses. The explanation that this could be caused by an enlargement of the detector active area due to spreading of the collecting electric field caused by radiation-induced defects is studied in this paper. We have used the alpha particles of 241Am, which interact in the GaAs surface layer, to study the enlargement of the detector active region after its degradation by 5 MeV electrons with doses ranging from 24 to 2000 kGy. The results show that the electric field spreads behind the Schottky contact metallization edges not only with increasing applied reverse bias but also with rising cumulative dose of radiation degradation in the dose range from 24 up to 100 kGy, followed by a slight reduction in area size. The electric collecting field keeps larger dimensions than before detector degradation for doses up to 600 kGy. For higher doses than 1000 kGy, the active area of the detector was reduced below its initial size before degradation. Moreover, the improvement of detection efficiency with increasing bias applied becomes weaker with increasing degradation dose. Radiation degradation affects the electric field distribution in semi-insulating GaAs detectors and the results obtained may provide useful knowledge to preparation of multi-pixel GaAs structures for imaging and particle tracking.

show abstract

Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics

Cited by 9 publications

References 4 publications

The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs

The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs

GaAs radiation-degraded detectors: gamma spectrometry at lowered temperatures

Spreading of an active region of semi-insulating GaAs detectors after radiation degradation

Contact Info

Product

Resources

About