In this work, Schottky detectors based on a high-quality 4H-SiC epitaxial layer with a thickness of 50 µm were prepared. The Schottky contact of Ni/Au metallization with a 3 mm diameter was made. Reverse current-voltage characteristics were measured up to a voltage of 300 V with a leakage current of 40 pA at room temperature. Using an α-particle radiation source, the spectrometric characteristics of the 4H-SiC detector were tested. The best energy resolution in the FWHM (Full Width and Half Maximum) about 15 keV for 5.5 MeV α-particles was observed. Furthermore, a 4H-SiC pixel sensor (256 × 256) for the Timepix3 reading chip was prepared. The spectrometric and imaging properties of the new Timepix3 detector based on the 4H-SiC sensor were tested. The results showed high energy resolution and also high-quality X-ray imaging of the biological object.

This work reports on a prototype of a semi-insulating GaAs Timepix imaging detector. The statistical noise of the detector was investigated under uniform X-ray illumination and compared with theoretical predictions. The results show that the detector operated close to the theoretical predictions. Further investigations were done using an aluminum testing object fabricated by single point diamond nanomachining. The testing object consisted of several steps with different heights. With precise beam hardening corrections, we were able to determine the height of each step and the thickness of the testing object. The average error in the thickness determination was about 10.8 µm. This corresponds to a relative value below 1% of the maximum thickness of the object.

Few-layer films of transition metal dichalcogenides have emerged as promising candidates for applications in electronics. Within this group of 2D materials, platinum diselenide (PtSe2) was predicted to be a compound with one of the highest charge carrier mobility. Recently, the successful integration of group III–V nitride semiconductors with NbNx-based superconductors was reported with a semiconductor transistor grown directly on a crystalline superconductor. This opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic, and piezoelectric properties of the semiconducting material. Here, we report on the fabrication of a few-layer PtSe2 film on top of an NbN substrate layer by selenization of pre-deposited 3 nm thick Pt layers. We found the selenization parameters preserving the chemical and structural integrity of both the PtSe2 and NbN films. The PtSe2 film alignment can be tuned by varying the nitrogen flow rate through the reaction chamber. The superconducting critical temperature of NbN is only slightly reduced in the optimized samples compared to pristine NbN. The carrier mobility in PtSe2 layers determined from Hall measurements is below 1 cm2/V s.

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