2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) 2019
DOI: 10.1109/pvsc40753.2019.8980672
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Development and Mass Production of Bifacial Q.ANTUM p-Cz PERC Cells

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Cited by 5 publications
(4 citation statements)
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“…3). Approximately 0.5% per year efficiency gain is more typical for cell technologies reaching maturity, as observed previously for Al-BSF and PERC [3]. As PERC is already approaching its maximum efficiency potential, it is difficult there to maintain a 0.5% annual learning rate, but by switching to passivating-contact cells we expect that such efficiency increases can continue for several additional years.…”
Section: Introductionsupporting
confidence: 65%
“…3). Approximately 0.5% per year efficiency gain is more typical for cell technologies reaching maturity, as observed previously for Al-BSF and PERC [3]. As PERC is already approaching its maximum efficiency potential, it is difficult there to maintain a 0.5% annual learning rate, but by switching to passivating-contact cells we expect that such efficiency increases can continue for several additional years.…”
Section: Introductionsupporting
confidence: 65%
“…The first squeegee blade with an angle of 60 • and the second squeegee blade with an angle of 130 • were set at a pressure of 3.5 N and a speed of 200 mm•s −1 . Monocrystalline silicon precursors with a passivated emitter rear contact (PERC) structure and size of 156.75 mm × 156.75 mm from a pilot line of Hanwha Q Cells (Thalheim, Germany) [15] were used as substrates and placed underneath the film at a distance of 200 µm. To avoid electrode interruptions, a determination of laser power threshold for each paste was performed.…”
Section: Ptp Experimentsmentioning
confidence: 99%
“…iii) Improvement of the PERC cell efficiency of 0.5 % within the next two years [24]. iv) Increasing wafer format [19], which results for M4 in a half cell area of 129.1 cm 2 and v) for M6 in a half cell area of 137.1 cm 2 .…”
Section: Temperature Prediction For Future Cells and Modulesmentioning
confidence: 99%
“…This development will also increase the dissipated power of reverse biased cells and brings the concept of three bypass diodes per module to the limit. The most critical developments that further exacerbate the hot spot issues are: i) The continuously improving cell and module efficiencies [19,24]. ii) Larger wafer formats that are pushing into the market since they potentially reduce the production cost [19,23,25].…”
Section: Introductionmentioning
confidence: 99%