Development of 5.5‐GHz Band Pass Filter in All Silicon Multilayer Substrate with Air Dielectric

Abstract

A compact 5.5‐GHz band pass filter (BPF) with 12.7% 3‐dB bandwidth is developed in an all silicon multilayer substrate with air dielectric incorporated for WiMax applications. The topology of the BPF is a capacitively coupled fifth‐order Chebyshev BPF. Its volume is 9.3 × 8.5 × 0.6 mm3. Two design aspects—air dielectric and through silicon via (TSV) technology integration—play an essential role in the BPF implementation. The spiral inductor with an integrated air dielectric has quality factor and self‐resonant frequency improvement of 112 and 41%, respectively. The TSVs in the BPF design enables the implementation of two‐layer inductors with a low value of inductance. The volume of TSV in the two‐layer inductor is 75 × 75 × 200 μm3 and its inductance is 0.15 nH at 5 GHz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2340–2345, 2013

Temperature‐mediated excitation of defect modes in a periodic structure at terahertz frequencies

“…At the opposite, such structures can be designed to increase reflectivity and can be used as optical mirrors to achieve high reflectivity either at a fixed wavelength 3 or in a broad frequency range 4 . Various other applications are possible, for example, as beam splitters, 5,6 filters that transmit (or reflect) parts of the spectrum, 7‐10 polarizers, 11 plasmonic devices, 12 to improve Raman spectroscopy, 13 to localize field, 14‐16 and so on.…”